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公开(公告)号：US20230013611A1
公开(公告)日：2023-01-19
申请号：US17954532
申请日：2022-09-28
Applicant: Samsung Electronics Co., Ltd.
Inventor： Yuhwan Ro , Shinhaeng Kang , Seongwook Park , Seungwoo Seo
Abstract: A memory device includes: memory operation circuitries to perform memory processing; memory banks assigned to one of the memory operation circuitries such that a set of n memory banks is assigned to each of the memory operation circuitries; and command pads to receive a command signal from an external source, wherein, for each of the memory operation circuitries, a corresponding memory operation circuitry to access memory banks of a corresponding set of n memory banks that is assigned to the corresponding memory operation circuitry, in an order determined based on respective distances from each of the memory banks of the corresponding set of n memory banks to the command pads, and wherein, each of the memory banks of the corresponding set of n memory banks to perform an access operation of data requested by the corresponding memory operation circuitry while the memory processing is performed.
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Patent Agency Ranking
公开(公告)号：US11494121B2
公开(公告)日：2022-11-08
申请号：US17098959
申请日：2020-11-16
Applicant: Samsung Electronics Co., Ltd.
Inventor： Yuhwan Ro , Shinhaeng Kang , Seongwook Park , Seungwoo Seo
Abstract: A memory device includes: in-memory operation units to perform in-memory processing of an operation pipelined in multi-pipeline stages; memory banks assigned to the plurality of in-memory operation units such that a set of n memory banks is assigned to each of the in-memory operation units, each memory bank performing an access operation of data requested by each of the plurality of in-memory operation units while the pipelined operation is performed, wherein n is a natural number; and a memory die in which the in-memory operation units, the memory banks, and command pads configured to receive a command signal from an external source are arranged. Each set of the n memory banks includes a first memory bank having a first data transmission distance to the command pads and a second memory bank having a second data transmission distance to the command pads that is larger than the first data transmission distance.
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公开(公告)号：US12204796B2
公开(公告)日：2025-01-21
申请号：US17954532
申请日：2022-09-28
Applicant: Samsung Electronics Co., Ltd.
Inventor： Yuhwan Ro , Shinhaeng Kang , Seongwook Park , Seungwoo Seo
Abstract: A memory device includes: memory operation circuitries to perform memory processing; memory banks assigned to one of the memory operation circuitries such that a set of n memory banks is assigned to each of the memory operation circuitries; and command pads to receive a command signal from an external source, wherein, for each of the memory operation circuitries, a corresponding memory operation circuitry to access memory banks of a corresponding set of n memory banks that is assigned to the corresponding memory operation circuitry, in an order determined based on respective distances from each of the memory banks of the corresponding set of n memory banks to the command pads, and wherein, each of the memory banks of the corresponding set of n memory banks to perform an access operation of data requested by the corresponding memory operation circuitry while the memory processing is performed.
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公开(公告)号：US12189948B2
公开(公告)日：2025-01-07
申请号：US18191254
申请日：2023-03-28
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Seongwook Park , Deok Jae Oh , Youngsam Shin , Yeongon Cho , Yongmin Tai
Abstract: A near-memory processing unit is configured to compress a page present in a normal memory space of a memory when receiving a swap-out command from a host, allocate a memory area in which the compressed page is to be stored in a compressed memory space which is a memory area previously allocated by the host, copy the compressed page into the allocated memory area, generate an entry corresponding to the compressed page, and insert the generated entry into an entry tree.
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公开(公告)号：US20250094092A1
公开(公告)日：2025-03-20
申请号：US18970303
申请日：2024-12-05
Applicant: Samsung Electronics Co., Ltd.
Inventor： Yuhwan Ro , Shinhaeng Kang , Seongwook Park , Seungwoo Seo
Abstract: A memory device includes: memory operation circuitries to perform memory processing; memory banks assigned to one of the memory operation circuitries such that a set of n memory banks is assigned to each of the memory operation circuitries; and command pads to receive a command signal from an external source, wherein, for each of the memory operation circuitries, a corresponding memory operation circuitry to access memory banks of a corresponding set of n memory banks that is assigned to the corresponding memory operation circuitry, in an order determined based on respective distances from each of the memory banks of the corresponding set of n memory banks to the command pads, and wherein, each of the memory banks of the corresponding set of n memory banks to perform an access operation of data requested by the corresponding memory operation circuitry while the memory processing is performed.
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公开(公告)号：US20210397376A1
公开(公告)日：2021-12-23
申请号：US17098959
申请日：2020-11-16
Applicant: Samsung Electronics Co., Ltd.
Inventor： Yuhwan Ro , Shinhaeng Kang , Seongwook Park , Seungwoo Seo
Abstract: A memory device includes: in-memory operation units to perform in-memory processing of an operation pipelined in multi-pipeline stages; memory banks assigned to the plurality of in-memory operation units such that a set of n memory banks is assigned to each of the in-memory operation units, each memory bank performing an access operation of data requested by each of the plurality of in-memory operation units while the pipelined operation is performed, wherein n is a natural number; and a memory die in which the in-memory operation units, the memory banks, and command pads configured to receive a command signal from an external source are arranged. Each set of the n memory banks includes a first memory bank having a first data transmission distance to the command pads and a second memory bank having a second data transmission distance to the command pads that is larger than the first data transmission distance.
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