公开(公告)号：US20150116565A1

公开(公告)日：2015-04-30

申请号：US14496445

申请日：2014-09-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seoung Hyun KIM ,  Mun Hwan KIM ,  Chan Hyung KIM ,  Jung Bin YUN ,  Young Gu JIN ,  Seung Won CHA

IPC: H04N5/374

CPC classification number: H04N5/37457 ,  H01L27/14607 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/14641 ,  H01L27/14645 ,  H04N9/045

Abstract: An image sensor according to an example embodiment of includes a first pixel and a second pixel in a first row. The first pixel includes a first photoelectric conversion element at a first depth in a semiconductor substrate and the first photoelectric conversion element is configured to convert a first visible light spectrum into a first photo charge, and the second pixel includes a second photoelectric conversion element at a second depth from the first depth in the semiconductor substrate, the second photoelectric conversion element is at least partially overlapped by the first photoelectric conversion element in a vertical direction, and the second photoelectric conversion element is configured to convert a second visible light spectrum into a second photo charge.

Abstract translation: 根据示例实施例的图像传感器包括第一行中的第一像素和第二像素。 第一像素包括在半导体衬底中的第一深度处的第一光电转换元件，并且第一光电转换元件被配置为将第一可见光光谱转换为第一光电荷，并且第二像素包括第二光电转换元件 所述第二光电转换元件与所述第一光电转换元件在垂直方向上至少部分地重叠，并且所述第二光电转换元件被配置为将第二可见光光谱转换为第二光可变光谱， 照片费。