公开(公告)号：US10971210B2

公开(公告)日：2021-04-06

申请号：US16993981

申请日：2020-08-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jong-chul Park ,  Youn-yeol Lee ,  Seul-bee Lee ,  Kyung-sub Lim

IPC: G11C16/04 ,  G11C16/10 ,  G11C16/26 ,  G11C11/4074 ,  G11C11/409 ,  G11C5/06 ,  G11C5/02 ,  G11C11/408

Abstract: A nonvolatile memory device includes a memory cell region including a first metal pad, and a peripheral circuit region including a second metal pad and vertically connected to the memory cell region by the first metal pad and the second metal pad. The memory cell region includes a first memory stack comprising first memory cells vertically stacked on each other, and a second memory stack comprising second memory cells vertically stacked on each other. The peripheral circuit region includes a control logic for setting a voltage level of a second voltage applied for a second memory operation to a second memory cell of the second memory cells based on a first voltage applied to a first memory cell of the first memory cells in a first memory operation. Cell characteristics of the first memory cell are determined using the first voltage.

公开(公告)号：US11164631B2

公开(公告)日：2021-11-02

申请号：US17113939

申请日：2020-12-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jong-chul Park ,  Youn-yeol Lee ,  Seul-bee Lee ,  Kyung-sub Lim

IPC: G11C16/04 ,  G11C11/56 ,  H01L27/11582 ,  G11C16/26 ,  G11C16/12 ,  G11C16/08 ,  G11C16/10

Abstract: A nonvolatile memory device includes a first memory stack including first memory cells vertically stacked on each other, a second memory stack including memory cells vertically stacked on each other, and a control logic configured to set a voltage level of a second voltage applied for a second memory operation to one of the second memory cells in the second memory stack based on a first voltage applied to one of the first memory cells in the first memory stack in a first memory operation. The second memory stack is vertically stacked on the first memory stack. Cell characteristics of the one of the first memory cells is determined using the first voltage.

公开(公告)号：US11250911B2

公开(公告)日：2022-02-15

申请号：US17196039

申请日：2021-03-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jong-chul Park ,  Youn-yeol Lee ,  Seul-bee Lee ,  Kyung-sub Lim

IPC: G11C16/04 ,  G11C11/56 ,  H01L27/11582 ,  G11C16/10 ,  G11C16/12 ,  G11C16/08 ,  G11C16/26

Abstract: An operating method of a storage device comprising a nonvolatile memory device comprising a first memory stack and a second memory stack, and a memory controller coupled to control the nonvolatile memory device, the operating method includes determining a first read voltage level with which a first memory cell of the first memory stack is successfully read, and performing a read operation on a second memory cell of the second memory stack using a second read voltage determined based on the first read voltage level.

公开(公告)号：US10885983B2

公开(公告)日：2021-01-05

申请号：US16458222

申请日：2019-07-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jong-chul Park ,  Youn-yeol Lee ,  Seul-bee Lee ,  Kyung-sub Lim

IPC: G11C16/04 ,  G11C16/26 ,  G11C16/10 ,  H01L27/11582 ,  G11C11/56 ,  G11C16/12 ,  G11C16/08

Abstract: A nonvolatile memory device includes a first memory stack including first memory cells vertically stacked on each other, a second memory stack including memory cells vertically stacked on each other, and a control logic configured to set a voltage level of a second voltage applied for a second memory operation to one of the second memory cells in the second memory stack based on a first voltage applied to one of the first memory cells in the first memory stack in a first memory operation. The second memory stack is vertically stacked on the first memory stack. Cell characteristics of the one of the first memory cells is determined using the first voltage.