公开(公告)号：US20210058080A1

公开(公告)日：2021-02-25

申请号：US16842051

申请日：2020-04-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seung Jin KIM ,  Wan KIM ,  Seung Hyun OH ,  Byung Ki HAN

IPC: H03K5/24 ,  H03B5/04 ,  H03B5/12

Abstract: A semiconductor device and a method for controlling amplitude of signal in the semiconductor device are provided. The semiconductor device comprises a signal generator configured to output a sinewave, a comparator configured to compare a magnitude of the sinewave with a magnitude of a reference signal at a first timing corresponding to a timing control signal and to output a comparison result, and a control signal adjustor configured to adjust one of the current control signal and a timing control signal depending on the comparison result of the comparator.

公开(公告)号：US20190079553A1

公开(公告)日：2019-03-14

申请号：US15914095

申请日：2018-03-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Woo Jin JANG ,  Seung Hyun OH ,  Jong Woo LEE

IPC: G05F3/16 ,  H03K17/567

CPC classification number: G05F3/16 ,  H03K17/567

Abstract: A bandgap reference voltage generation system includes a common mode voltage generator, a bandgap reference voltage generation circuit, and a switch controller. The bandgap reference voltage generation circuit includes a plurality of transistors having source terminals respectively connected to drain terminals of a plurality of PMOS transistors. The switch controller provides a ground voltage to the bandgap reference voltage generation circuit in a first mode and a common mode voltage to the bandgap reference voltage generation circuit in a second mode. The bandgap reference voltage generation circuit causes the plurality of the transistors to operate in a linear region by providing the common mode voltage to gate electrodes of the plurality of the transistors in the first mode and a saturation region by providing the ground voltage to the gate electrodes of the plurality of the transistors in the second mode.