公开(公告)号：US11437380B2

公开(公告)日：2022-09-06

申请号：US16898640

申请日：2020-06-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kwang-Ho Park ,  Jae Hoon Kim ,  Yong-Hoon Son ,  Seung Jae Jung

IPC: H01L27/06 ,  H01L27/108 ,  H01L21/768

Abstract: A semiconductor memory device including first-first conductive lines on a substrate; second-first conductive lines on the first-first conductive lines; first contacts connected to the first-first conductive lines; and second contacts connected to the second-first conductive lines, wherein the first-first conductive lines protrude in a first direction beyond the second-first conductive lines; the first-first conductive lines include first regions having a first thickness, second regions having a second thickness, the second thickness being greater than the first thickness, and third regions having a third thickness, the third thickness being smaller than the first thickness and smaller than the second thickness, and the second regions of the first-first conductive lines are between the first regions of the first-first conductive lines and the third regions of the first-first conductive lines.

公开(公告)号：US11315929B2

公开(公告)日：2022-04-26

申请号：US17038606

申请日：2020-09-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seung Jae Jung ,  Jae Hoon Kim ,  Kwang-Ho Park ,  Yong-hoon Son

IPC: H01L27/108 ,  H01L27/13 ,  H01L25/18 ,  H01L27/12

Abstract: A semiconductor device includes a bit line extending in a first direction, a gate electrode extending in a second direction, and a semiconductor pattern extending in a third direction and connected to the bit line, and a capacitor. The capacitor includes a first electrode connected to the semiconductor pattern and a dielectric film between the first and second electrodes. The first or the second direction is perpendicular to an upper surface of the substrate. The first electrode includes an upper and a lower plate region parallel to the upper surface of the substrate, and a connecting region which connects the upper and the lower plate regions. The upper and the lower plate regions of the first electrode include an upper and a lower surface facing each other. The dielectric film extends along the upper and the lower surfaces of the upper and lower plate regions of the first electrode.

公开(公告)号：US12302550B2

公开(公告)日：2025-05-13

申请号：US17699839

申请日：2022-03-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seung Jae Jung ,  Jae Hoon Kim ,  Kwang-Ho Park ,  Yong-Hoon Son

IPC: H10B12/00 ,  H01L25/18 ,  H10D86/80 ,  H10D87/00

Abstract: A semiconductor device includes a bit line extending in a first direction, a gate electrode extending in a second direction, and a semiconductor pattern extending in a third direction and connected to the bit line, and a capacitor. The capacitor includes a first electrode connected to the semiconductor pattern and a dielectric film between the first and second electrodes. The first or the second direction is perpendicular to an upper surface of the substrate. The first electrode includes an upper and a lower plate region parallel to the upper surface of the substrate, and a connecting region which connects the upper and the lower plate regions. The upper and the lower plate regions of the first electrode include an upper and a lower surface facing each other. The dielectric film extends along the upper and the lower surfaces of the upper and lower plate regions of the first electrode.