公开(公告)号：US12046616B2

公开(公告)日：2024-07-23

申请号：US17318231

申请日：2021-05-12

申请人： Samsung Electronics Co., Ltd.

发明人： Seung Ki Baek ,  Kyung Ho Lee ,  Tae Sub Jung ,  Doo Sik Seol ,  Seung Ki Jung

IPC分类号： H01L27/146

CPC分类号： H01L27/1463 ,  H01L27/14614 ,  H01L27/14627 ,  H01L27/14636

摘要： An image sensor includes a substrate, a first isolation region defining a unit pixel, a first photoelectric conversion region in the unit pixel, a second photoelectric conversion region in the unit pixel, the second photoelectric conversion region spaced apart from the first photoelectric conversion region, a floating diffusion region, the floating diffusion region adjacent to the first surface of the substrate, a first transfer gate on the first surface of the substrate, the first transfer gate between the first photoelectric conversion region and the floating diffusion region, and a second transfer gate on the first surface of the substrate, the second transfer gate between the second photoelectric conversion region and the floating diffusion region. At least a part of the first transfer gate is buried in the substrate, and a bottom surface of the first transfer gate is different in height from a bottom surface of the second transfer gate.