公开(公告)号：US12046616B2

公开(公告)日：2024-07-23

申请号：US17318231

申请日：2021-05-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seung Ki Baek ,  Kyung Ho Lee ,  Tae Sub Jung ,  Doo Sik Seol ,  Seung Ki Jung

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14614 ,  H01L27/14627 ,  H01L27/14636

Abstract: An image sensor includes a substrate, a first isolation region defining a unit pixel, a first photoelectric conversion region in the unit pixel, a second photoelectric conversion region in the unit pixel, the second photoelectric conversion region spaced apart from the first photoelectric conversion region, a floating diffusion region, the floating diffusion region adjacent to the first surface of the substrate, a first transfer gate on the first surface of the substrate, the first transfer gate between the first photoelectric conversion region and the floating diffusion region, and a second transfer gate on the first surface of the substrate, the second transfer gate between the second photoelectric conversion region and the floating diffusion region. At least a part of the first transfer gate is buried in the substrate, and a bottom surface of the first transfer gate is different in height from a bottom surface of the second transfer gate.

公开(公告)号：US11063075B2

公开(公告)日：2021-07-13

申请号：US16433568

申请日：2019-06-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jung Wook Lim ,  Dong Joo Yang ,  Sung Soo Choi ,  Doo Sik Seol ,  Seung Ki Jung

IPC: H01L27/146 ,  H01L27/32 ,  H01L51/50 ,  H01L51/52

Abstract: A semiconductor device including: a substrate having a first surface and a second surface facing the first surface, wherein light is incident on the second surface; a pixel region formed in the substrate; a semiconductor photoelectric converter disposed in the pixel region and the substrate; one or more transistors disposed in the pixel region and at the first surface of the substrate, wherein the one or more transistors do not overlap the semiconductor photoelectric converter; and a separation pattern disposed in the pixel region and surrounding the one or more transistors.