公开(公告)号：US11063075B2

公开(公告)日：2021-07-13

申请号：US16433568

申请日：2019-06-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jung Wook Lim ,  Dong Joo Yang ,  Sung Soo Choi ,  Doo Sik Seol ,  Seung Ki Jung

IPC: H01L27/146 ,  H01L27/32 ,  H01L51/50 ,  H01L51/52

Abstract: A semiconductor device including: a substrate having a first surface and a second surface facing the first surface, wherein light is incident on the second surface; a pixel region formed in the substrate; a semiconductor photoelectric converter disposed in the pixel region and the substrate; one or more transistors disposed in the pixel region and at the first surface of the substrate, wherein the one or more transistors do not overlap the semiconductor photoelectric converter; and a separation pattern disposed in the pixel region and surrounding the one or more transistors.

公开(公告)号：US12154926B2

公开(公告)日：2024-11-26

申请号：US17360447

申请日：2021-06-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyung Duck Lee ,  Doo Sik Seol ,  Kyung Ho Lee ,  Tae Sub Jung ,  Masato Fujita

IPC: H01L27/146 ,  H01L23/60

Abstract: An image sensor includes a substrate including a first side on which light is incident, and a second side opposite to the first side, a pixel isolation pattern formed inside the substrate which defines a plurality of unit pixels, a first photoelectric conversion region and a second photoelectric conversion region arranged along a first direction, inside each of the unit pixels, and a region isolation pattern which protrudes from the pixel isolation pattern in a second direction intersecting the first direction, and defines an isolation region between the first photoelectric conversion region and the second photoelectric conversion region. A first width of the isolation region in the second direction on the first side is more than about 1.1 times a second width of the isolation region in the second direction on the second side.

公开(公告)号：US12046616B2

公开(公告)日：2024-07-23

申请号：US17318231

申请日：2021-05-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seung Ki Baek ,  Kyung Ho Lee ,  Tae Sub Jung ,  Doo Sik Seol ,  Seung Ki Jung

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14614 ,  H01L27/14627 ,  H01L27/14636

Abstract: An image sensor includes a substrate, a first isolation region defining a unit pixel, a first photoelectric conversion region in the unit pixel, a second photoelectric conversion region in the unit pixel, the second photoelectric conversion region spaced apart from the first photoelectric conversion region, a floating diffusion region, the floating diffusion region adjacent to the first surface of the substrate, a first transfer gate on the first surface of the substrate, the first transfer gate between the first photoelectric conversion region and the floating diffusion region, and a second transfer gate on the first surface of the substrate, the second transfer gate between the second photoelectric conversion region and the floating diffusion region. At least a part of the first transfer gate is buried in the substrate, and a bottom surface of the first transfer gate is different in height from a bottom surface of the second transfer gate.