公开(公告)号：US11003293B2

公开(公告)日：2021-05-11

申请号：US16620586

申请日：2018-05-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Mee Ryung Choi ,  Keun Sik Lee ,  Hye Won Im ,  Moo Young Kim ,  Ki Huk Lee ,  Seung Won Cha ,  Ho Chul Hwang

IPC: G06F3/044 ,  G06F3/0484 ,  G06F3/0488

Abstract: An electronic device and method are disclosed. The electronic device includes a memory, a display, a touch sensor included in the display or coupled to the display, and configured to sense a touch. A pressure sensor configured to detect a pressure value of the touch and a processor electrically connected with the memory, the display, the touch sensor, and the pressure sensor, wherein the processor is configured to sense a first touch having a pressure value of a specified threshold value or greater, by using the touch sensor and the pressure sensor, store first location data of the first touch in the memory, sense a second touch, by using the touch sensor and the pressure sensor, wherein the second touch has a pressure value of the specified threshold value or greater and is made after sensing the first touch and perform a specified operation of utilizing the first location data and second location data of the second touch as an input, in response to sensing the second touch.

公开(公告)号：US09380242B2

公开(公告)日：2016-06-28

申请号：US14496445

申请日：2014-09-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seoung Hyun Kim ,  Mun Hwan Kim ,  Chan Hyung Kim ,  Jung Bin Yun ,  Young Gu Jin ,  Seung Won Cha

IPC: H04N5/378 ,  H04N5/3745 ,  H04N9/04 ,  H01L27/146

CPC classification number: H04N5/37457 ,  H01L27/14607 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/14641 ,  H01L27/14645 ,  H04N9/045

Abstract: An image sensor according to an example embodiment of includes a first pixel and a second pixel in a first row. The first pixel includes a first photoelectric conversion element at a first depth in a semiconductor substrate and the first photoelectric conversion element is configured to convert a first visible light spectrum into a first photo charge, and the second pixel includes a second photoelectric conversion element at a second depth from the first depth in the semiconductor substrate, the second photoelectric conversion element is at least partially overlapped by the first photoelectric conversion element in a vertical direction, and the second photoelectric conversion element is configured to convert a second visible light spectrum into a second photo charge.

Abstract translation: 根据示例实施例的图像传感器包括第一行中的第一像素和第二像素。 第一像素包括在半导体衬底中的第一深度处的第一光电转换元件，并且第一光电转换元件被配置为将第一可见光光谱转换为第一光电荷，并且第二像素包括第二光电转换元件 所述第二光电转换元件与所述第一光电转换元件在垂直方向上至少部分地重叠，并且所述第二光电转换元件被配置为将第二可见光光谱转换为第二光可变光谱， 照片费。