公开(公告)号：US11437264B2

公开(公告)日：2022-09-06

申请号：US17182613

申请日：2021-02-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung Mo Sung ,  Jong Woo Sun ,  Je Woo Han ,  Chan Hoon Park ,  Seung Yoon Song ,  Seul Ha Myung

IPC: H01L21/68 ,  H01L21/683 ,  H01L21/67

Abstract: A semiconductor processing apparatus includes a chamber housing, an electrostatic chuck disposed in the chamber housing, the electrostatic chuck being configured to hold a semiconductor wafer, an edge ring surrounding the electrostatic chuck, the edge ring including a ring electrode disposed within the edge ring, and a ring voltage supply configured to supply a ring voltage to the ring electrode, the ring voltage having a non-sinusoidal periodic waveform, wherein each period of the non-sinusoidal periodic waveform comprises a positive voltage applied during a first time period and a negative voltage applied during a second time period, and wherein the negative voltage has a magnitude that increases during the second time period.

公开(公告)号：US10964578B2

公开(公告)日：2021-03-30

申请号：US16401792

申请日：2019-05-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung Mo Sung ,  Jong Woo Sun ,  Je Woo Han ,  Chan Hoon Park ,  Seung Yoon Song ,  Seul Ha Myung

IPC: H01L21/683 ,  H01L21/67

Abstract: A semiconductor processing apparatus includes a chamber housing, an electrostatic chuck disposed in the chamber housing, the electrostatic chuck being configured to hold a semiconductor wafer, an edge ring surrounding the electrostatic chuck, the edge ring including a ring electrode disposed within the edge ring, and a ring voltage supply configured to supply a ring voltage to the ring electrode, the ring voltage having a non-sinusoidal periodic waveform, wherein each period of the non-sinusoidal periodic waveform comprises a positive voltage applied during a first time period and a negative voltage applied during a second time period, and wherein the negative voltage has a magnitude that increases during the second time period.