公开(公告)号：US20240136234A1

公开(公告)日：2024-04-25

申请号：US18380691

申请日：2023-10-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Mingyoo CHOI ,  Jinsun Kim ,  Seunghak Park ,  Jongsu Park ,  Sunkak Jo

IPC: H01L21/66 ,  H01L21/311

CPC classification number: H01L22/12 ,  H01L21/31116

Abstract: A method of measuring an overlay offset, the method includes: providing a substrate including a lower pattern and an upper pattern, wherein the lower pattern is disposed in a cell area, and the upper pattern is disposed on the lower pattern; acquiring a first piece of overlay information about a first position of the lower pattern and a second position of the upper pattern by detecting a pupil image of a joint position that is between the upper pattern and the lower pattern; detecting an overlay offset of the second position of the upper pattern relative to the first position of the lower pattern through Zernike polynomial modeling; and acquiring compensation overlay information on the upper pattern from the overlay offset of the second position, wherein the overlay offset includes a radial tilting component.

公开(公告)号：US20240222202A1

公开(公告)日：2024-07-04

申请号：US18498194

申请日：2023-10-31

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sangwon Park ,  Seunghak Park ,  Byeonghwan Son ,  Ayeong Cha

IPC: H01L21/66 ,  G01B11/06 ,  H01L21/67

CPC classification number: H01L22/26 ,  G01B11/06 ,  H01L21/67253 ,  H10B41/27

Abstract: A method of manufacturing a device includes forming a first layer on a first substrate, the first layer for measuring a thickness thereof; irradiating the first layer with first light having a first wavelength that passes into the first layer; sensing first reflected light reflected from a bottom surface of the first layer; irradiating the first layer with second light having a second wavelength shorter than the first wavelength that reflects from the first layer; sensing second reflected light reflected from an upper surface of the first layer; obtaining first data corresponding to a first positional coordinate in a vertical direction of the bottom surface of the first layer from the first reflected light; obtaining second data corresponding to a second positional coordinate in the vertical direction of the upper surface of the first layer from the second reflected light; and obtaining skew data representing a thickness of the first layer using the first and second data.