公开(公告)号：US12176376B2

公开(公告)日：2024-12-24

申请号：US17533468

申请日：2021-11-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Junghoon Park ,  Hyungjin Bae ,  Seungho Shin ,  Youngsun Oh ,  Moosup Lim

IPC: H01L27/146

Abstract: An image sensor includes a substrate including a first surface and a second surface facing the first surface, a first photodiode located in a first region of the substrate and generating photocharges from light incident on the first region, a second photodiode located in a second region of the substrate and generating photocharges from light incident on the second region, and an isolation structure defining the first region in which the first photodiode is located and the second region in which the second photodiode is located, and extending between the first photodiode and the second photodiode. An area of the second region is smaller than an area of the first region, a first end of the isolation structure is coplanar with the second surface, and the isolation structure extends in a vertical direction from the second surface of the substrate toward the first surface of the substrate.

公开(公告)号：US20220123033A1

公开(公告)日：2022-04-21

申请号：US17313601

申请日：2021-05-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Eunji Park ,  Hyungjin Bae ,  Moosup Lim ,  Seungho Shin ,  Kangsun Lee

IPC: H01L27/146 ,  H04N5/235

Abstract: An image sensor includes a plurality of first photodiodes included in a first area of a unit pixel, and configured to generate electric charges, a second photodiode included in a second area of the unit pixel, and configured to generate electric charges, a first microlens disposed above the first area, a second microlens disposed above the second area, a first floating diffusion region included in the first area, a second floating diffusion region included in the second area, a plurality of first transfer transistors configured to provide the electric charges generated by the plurality of first photodiodes to the first floating diffusion region, and a second transfer transistor configured to provide the electric charges generated by the second photodiode to the second floating diffusion region. A sum of light-receiving areas of the plurality of first photodiodes is greater than a light-receiving area of the second photodiode.

公开(公告)号：US11848338B2

公开(公告)日：2023-12-19

申请号：US17313601

申请日：2021-05-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Eunji Park ,  Hyungjin Bae ,  Moosup Lim ,  Seungho Shin ,  Kangsun Lee

IPC: H01L27/146 ,  H04N23/73 ,  H04N23/741 ,  H04N23/745

CPC classification number: H01L27/14605 ,  H01L27/1463 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14645 ,  H04N23/73 ,  H04N23/741 ,  H04N23/745

Abstract: An image sensor includes a plurality of first photodiodes included in a first area of a unit pixel, and configured to generate electric charges, a second photodiode included in a second area of the unit pixel, and configured to generate electric charges, a first microlens disposed above the first area, a second microlens disposed above the second area, a first floating diffusion region included in the first area, a second floating diffusion region included in the second area, a plurality of first transfer transistors configured to provide the electric charges generated by the plurality of first photodiodes to the first floating diffusion region, and a second transfer transistor configured to provide the electric charges generated by the second photodiode to the second floating diffusion region. A sum of light-receiving areas of the plurality of first photodiodes is greater than a light-receiving area of the second photodiode.

公开(公告)号：US20250040266A1

公开(公告)日：2025-01-30

申请号：US18916887

申请日：2024-10-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Junghoon Park ,  Hyungjin Bae ,  Seungho Shin ,  Youngsun Oh ,  Moosup Lim

IPC: H01L27/146

Abstract: An image sensor includes a substrate including a first surface and a second surface facing the first surface, a first photodiode located in a first region of the substrate and generating photocharges from light incident on the first region, a second photodiode located in a second region of the substrate and generating photocharges from light incident on the second region, and an isolation structure defining the first region in which the first photodiode is located and the second region in which the second photodiode is located, and extending between the first photodiode and the second photodiode. An area of the second region is smaller than an area of the first region, a first end of the isolation structure is coplanar with the second surface, and the isolation structure extends in a vertical direction from the second surface of the substrate toward the first surface of the substrate.

公开(公告)号：US20220328557A1

公开(公告)日：2022-10-13

申请号：US17533468

申请日：2021-11-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Junghoon Park ,  Hyungjin Bae ,  Seungho Shin ,  Youngsun Oh ,  Moosup Lim

IPC: H01L27/146

Abstract: An image sensor includes a substrate including a first surface and a second surface facing the first surface, a first photodiode located in a first region of the substrate and generating photocharges from light incident on the first region, a second photodiode located in a second region of the substrate and generating photocharges from light incident on the second region, and an isolation structure defining the first region in which the first photodiode is located and the second region in which the second photodiode is located, and extending between the first photodiode and the second photodiode. An area of the second region is smaller than an area of the first region, a first end of the isolation structure is coplanar with the second surface, and the isolation structure extends in a vertical direction from the second surface of the substrate toward the first surface of the substrate.

公开(公告)号：US09508766B2

公开(公告)日：2016-11-29

申请号：US14813182

申请日：2015-07-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： HyunPil Noh ,  Dong-Chul Lee ,  Seokha Lee ,  Chan Park ,  Seungho Shin

IPC: H01L27/00 ,  H01L27/146

CPC classification number: H01L27/14614 ,  H01L27/14603 ,  H01L27/14616 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14689

Abstract: An image sensor includes a photoelectric conversion element in a substrate, a first storage region spaced apart from the photoelectric conversion element in the substrate, a gate on the first storage region, a light shielding layer covering the gate, a dielectric layer disposed between the gate and the light shielding layer and extending onto a top surface of the substrate, an interlayer insulating structure covering the light shielding layer, and a micro-lens overlapping with the photoelectric conversion element on the interlayer insulating structure. The light shielding layer includes a first portion covering a sidewall of the gate, and a second portion on a top surface of the gate. The first portion has a first thickness corresponding to a vertical height from a bottom surface of the first portion to a top surface of the first portion, and the first thickness is greater than a second thickness of the second portion.

Abstract translation: 图像传感器包括基板中的光电转换元件，与基板中的光电转换元件间隔开的第一存储区域，第一存储区域上的栅极，覆盖栅极的遮光层，设置在栅极之间的介电层 并且遮光层延伸到基板的顶表面，覆盖遮光层的层间绝缘结构和与层间绝缘结构上的光电转换元件重叠的微透镜。 遮光层包括覆盖栅极侧壁的第一部分和栅极顶表面上的第二部分。 第一部分具有对应于从第一部分的底表面到第一部分的顶表面的垂直高度的第一厚度，并且第一厚度大于第二部分的第二厚度。