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    IMAGE SENSOR
    1.
    发明申请
    IMAGE SENSOR 有权

    公开(公告)号：US20220123033A1

    公开(公告)日：2022-04-21

    申请号：US17313601

    申请日：2021-05-06

    申请人： SAMSUNG ELECTRONICS CO., LTD.

    发明人： Eunji Park ,  Hyungjin Bae ,  Moosup Lim ,  Seungho Shin ,  Kangsun Lee

    IPC分类号： H01L27/146 ,  H04N5/235

    摘要： An image sensor includes a plurality of first photodiodes included in a first area of a unit pixel, and configured to generate electric charges, a second photodiode included in a second area of the unit pixel, and configured to generate electric charges, a first microlens disposed above the first area, a second microlens disposed above the second area, a first floating diffusion region included in the first area, a second floating diffusion region included in the second area, a plurality of first transfer transistors configured to provide the electric charges generated by the plurality of first photodiodes to the first floating diffusion region, and a second transfer transistor configured to provide the electric charges generated by the second photodiode to the second floating diffusion region. A sum of light-receiving areas of the plurality of first photodiodes is greater than a light-receiving area of the second photodiode.

    IMAGE SENSOR
    2.
    发明申请
    IMAGE SENSOR 有权

    公开(公告)号：US20220328557A1

    公开(公告)日：2022-10-13

    申请号：US17533468

    申请日：2021-11-23

    申请人： Samsung Electronics Co., Ltd.

    发明人： Junghoon Park ,  Hyungjin Bae ,  Seungho Shin ,  Youngsun Oh ,  Moosup Lim

    IPC分类号： H01L27/146

    摘要： An image sensor includes a substrate including a first surface and a second surface facing the first surface, a first photodiode located in a first region of the substrate and generating photocharges from light incident on the first region, a second photodiode located in a second region of the substrate and generating photocharges from light incident on the second region, and an isolation structure defining the first region in which the first photodiode is located and the second region in which the second photodiode is located, and extending between the first photodiode and the second photodiode. An area of the second region is smaller than an area of the first region, a first end of the isolation structure is coplanar with the second surface, and the isolation structure extends in a vertical direction from the second surface of the substrate toward the first surface of the substrate.

    Image sensor comprising entangled pixel
    4.
    发明授权
    Image sensor comprising entangled pixel 有权

    公开(公告)号：US11581357B2

    公开(公告)日：2023-02-14

    申请号：US16778122

    申请日：2020-01-31

    申请人： Samsung Electronics Co., Ltd.

    发明人： Younggu Jin ,  Youngchan Kim ,  Taesub Jung ,  Yonghun Kwon ,  Moosup Lim

    IPC分类号： H01L27/146 ,  G01S7/4865 ,  G01B11/22 ,  G01S17/894

    摘要： A depth sensor includes a first pixel including a plurality of first photo transistors each receiving a first photo gate signal, a second pixel including a plurality of second photo transistors each receiving a second photo gate signal, a third pixel including a plurality of third photo transistors each receiving a third photo gate signal, a fourth pixel including a plurality of fourth photo transistors each receiving a fourth photo gate signal, and a photoelectric conversion element shared by first to fourth photo transistors of the plurality of first to fourth photo transistors.

    Image sensor
    6.
    发明授权
    Image sensor 有权

    公开(公告)号：US11848338B2

    公开(公告)日：2023-12-19

    申请号：US17313601

    申请日：2021-05-06

    申请人： SAMSUNG ELECTRONICS CO., LTD.

    发明人： Eunji Park ,  Hyungjin Bae ,  Moosup Lim ,  Seungho Shin ,  Kangsun Lee

    IPC分类号： H01L27/146 ,  H04N23/73 ,  H04N23/741 ,  H04N23/745

    CPC分类号： H01L27/14605 ,  H01L27/1463 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14645 ,  H04N23/73 ,  H04N23/741 ,  H04N23/745

    摘要： An image sensor includes a plurality of first photodiodes included in a first area of a unit pixel, and configured to generate electric charges, a second photodiode included in a second area of the unit pixel, and configured to generate electric charges, a first microlens disposed above the first area, a second microlens disposed above the second area, a first floating diffusion region included in the first area, a second floating diffusion region included in the second area, a plurality of first transfer transistors configured to provide the electric charges generated by the plurality of first photodiodes to the first floating diffusion region, and a second transfer transistor configured to provide the electric charges generated by the second photodiode to the second floating diffusion region. A sum of light-receiving areas of the plurality of first photodiodes is greater than a light-receiving area of the second photodiode.

    Image sensor including particular readout circuit arrangement
    7.
    发明授权
    Image sensor including particular readout circuit arrangement 有权

    公开(公告)号：US11088185B2

    公开(公告)日：2021-08-10

    申请号：US16592840

    申请日：2019-10-04

    申请人： Samsung Electronics Co., Ltd.

    发明人： Younggu Jin ,  Youngchan Kim ,  Yonghun Kwon ,  Moosup Lim ,  Taesub Jung

    IPC分类号： H04N5/374 ,  H01L27/146 ,  H04N5/378 ,  H04N5/3745 ,  H04N5/225 ,  G06T7/50

    摘要： An image sensor includes a polarizer array and a depth pixel array. The polarizer array may include first to fourth unit pixels, which are arranged in a first direction and a second direction crossing each other, and may include polarization gratings respectively provided in the first to fourth unit pixels. The polarization gratings of the first to fourth unit pixels may have polarization directions different from each other. The depth pixel array may include depth pixels corresponding to the first to fourth unit pixels, respectively. Each of the depth pixels may include a photoelectric conversion device and first and second readout circuits, which are connected in common to the photoelectric conversion device.

    Image sensor
    9.
    发明授权
    Image sensor 有权

    公开(公告)号：US11665443B2

    公开(公告)日：2023-05-30

    申请号：US17674045

    申请日：2022-02-17

    申请人： SAMSUNG ELECTRONICS CO., LTD.

    发明人： Youngsun Oh ,  Hyungjin Bae ,  Moosup Lim

    IPC分类号： H04N25/585 ,  H04N25/75 ,  H04N25/77

    CPC分类号： H04N25/585 ,  H04N25/75 ,  H04N25/77

    摘要： An image sensor including a pixel that includes: a first photodiode; a second photodiode having a larger light-receiving area than the first photodiode; a first floating diffusion node accumulating charges of the first photodiode; a second floating diffusion node accumulating charges of the second photodiode; a capacitor accumulating charges overflowing from the first photodiode; a first switch transistor having a first end connected to the first floating diffusion node and a second end connected to the capacitor; and a driving transistor configured to convert the accumulated charges into a pixel signal, the first switch transistor is turned on in a low conversion gain (LCG) mode of a readout section of the first photodiode, and is turned off in a high conversion gain (HCG) mode of the readout section of the first photodiode, and the readout circuit generates image data based on pixel signals from the first and second sections.

    Sensor operating based on measuring range of depth and sensing system including the same
    10.
    发明授权
    Sensor operating based on measuring range of depth and sensing system including the same 有权

    公开(公告)号：US11290673B2

    公开(公告)日：2022-03-29

    申请号：US16876567

    申请日：2020-05-18

    申请人： Samsung Electronics Co., Ltd.

    发明人： Younggu Jin ,  Youngchan Kim ,  Moosup Lim

    IPC分类号： H04N5/378 ,  H01L27/146 ,  H04N5/372 ,  H04N5/3745 ,  H04N5/369

    摘要： According to at least some example embodiments of the inventive concepts, a sensor includes a pixel array including a pixel configured to generate a first pixel signal and a second pixel signal, based on a light sensed during a window time of a sensing time; processing circuitry configured to select a measuring range from among a plurality of measuring ranges and set a width of the window time based on the selected measuring range; a converting circuit configured to convert the first and second pixel signals into digital signals; and a driving circuit configured to generate an overflow control signal, a first photo gate signal, and a second photo gate signal so as to sense the light during the window time, wherein the pixel includes, a photoelectric conversion element, first and second readout circuits configured to receive charges, and an overflow transistor configured to remove charges.