公开(公告)号：US20210382513A1

公开(公告)日：2021-12-09

申请号：US17150316

申请日：2021-01-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyung-Min KIM ,  Haesick SUL ,  Sunyool KANG ,  Yunhong KIM ,  Seungmin SUH ,  Hyeonji LEE ,  Yunhwan JUNG

IPC: G05F3/26 ,  G05F1/46

Abstract: Disclosed is a bandgap reference circuit, which includes a first current generator that generates a first current proportional to a temperature, a second current generator that outputs a second current obtained by mirroring the first current to a first node at which a reference voltage is formed, a first resistor that is connected with the first node and is supplied with the second current, and a first bipolar junction transistor (BJT) that includes an emitter node connected with the first resistor, a base node supplied with a first power, and a collector node supplied with a second power different from the first power.