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    IMAGE SENSOR
    3.
    发明申请
    IMAGE SENSOR 有权

    公开(公告)号：US20250024168A1

    公开(公告)日：2025-01-16

    申请号：US18443417

    申请日：2024-02-16

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Yunhong KIM ,  Mooyoung KIM

    IPC: H04N25/583 ,  H04N25/533 ,  H04N25/77

    Abstract: An image sensor including: a pixel array including pixels; and a logic circuit including a row decoder to drive selected pixels, a column decoder to vary exposure time periods for a portion of the selected pixels, and a readout circuit to obtain pixel signals from the selected pixels, wherein each of the pixels includes a photodiode, a first transfer transistor connected between the photodiode and a first floating diffusion region, a second transfer transistor connected between the first floating diffusion region and a second floating diffusion region, a first reset transistor and a switch transistor connected to each other in series between a power node and the first floating diffusion region, a second reset transistor connected between the power node and the second floating diffusion region, a source-follower transistor connected to the second floating diffusion region, and a select transistor connected to the source-follower transistor.

    IMAGE SENSOR
    4.
    发明申请
    IMAGE SENSOR 有权

    公开(公告)号：US20210335869A1

    公开(公告)日：2021-10-28

    申请号：US17119330

    申请日：2020-12-11

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Yunhong KIM ,  Yunhwan JUNG ,  Heesung CHAE

    IPC: H01L27/146 ,  H04N5/378

    Abstract: An image sensor includes a substrate including an active pixel region and an inactive pixel region, having a smaller area than the active pixel region; a plurality of active pixels in the active pixel region, each of the plurality of active pixels including a first transfer transistor, a first reset transistor, a first driving transistor, and a first selection transistor; and a plurality of inactive pixels in the inactive pixel region, each of the plurality of inactive pixels including a second transfer transistor, a second reset transistor, a second driving transistor, a second selection transistor, and a switch transistor connected to a node between the second driving transistor and the second select transistor. The plurality of switch transistors, included in the plurality of inactive pixels, are connected to each other by a connection wiring.

    IMAGE SENSOR INCLUDING PIXEL ARRAY
    7.
    发明申请
    IMAGE SENSOR INCLUDING PIXEL ARRAY 有权

    公开(公告)号：US20230011310A1

    公开(公告)日：2023-01-12

    申请号：US17857812

    申请日：2022-07-05

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Yunhong KIM ,  Yunhwan JUNG ,  Heesung CHAE ,  Mooyoung KIM ,  Haesick SUL

    IPC: H04N5/378 ,  H04N5/361 ,  H04N5/369

    Abstract: An image sensor may include a pixel array a pixel array including an active pixel and an optical black pixel, the active pixel configured to generate a first pixel signal, and the optical black pixel configured to generate a second pixel signal, a first biasing circuit configured to bias the first pixel signal based on a first bias voltage, a first analog-to-digital converter configured to convert the biased first pixel signal into a first digital signal, a second biasing circuit configured to bias the second pixel signal based on a second bias voltage, and a second analog-to-digital converter configured to convert the biased second pixel signal into a second digital signal, the second digital signal configured to generate smaller random noise than the first analog-to-digital converter.

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