公开(公告)号：US20230011310A1

公开(公告)日：2023-01-12

申请号：US17857812

申请日：2022-07-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yunhong KIM ,  Yunhwan JUNG ,  Heesung CHAE ,  Mooyoung KIM ,  Haesick SUL

IPC: H04N5/378 ,  H04N5/361 ,  H04N5/369

Abstract: An image sensor may include a pixel array a pixel array including an active pixel and an optical black pixel, the active pixel configured to generate a first pixel signal, and the optical black pixel configured to generate a second pixel signal, a first biasing circuit configured to bias the first pixel signal based on a first bias voltage, a first analog-to-digital converter configured to convert the biased first pixel signal into a first digital signal, a second biasing circuit configured to bias the second pixel signal based on a second bias voltage, and a second analog-to-digital converter configured to convert the biased second pixel signal into a second digital signal, the second digital signal configured to generate smaller random noise than the first analog-to-digital converter.

公开(公告)号：US20230295908A1

公开(公告)日：2023-09-21

申请号：US18322355

申请日：2023-05-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyung-Min KIM ,  Haesick SUL ,  Sunyood KANG ,  Yungong KIM ,  Seongnam-si SUH ,  Hyeongji LEE ,  Yunhwan JUNG

IPC: E03C1/086

CPC classification number: E03C1/086

Abstract: Disclosed is a bandgap reference circuit, which includes a first current generator that generates a first current proportional to a temperature, a second current generator that outputs a second current obtained by mirroring the first current to a first node at which a reference voltage is formed, a first resistor that is connected with the first node and is supplied with the second current, and a first bipolar junction transistor (BJT) that includes an emitter node connected with the first resistor, a base node supplied with a first power, and a collector node supplied with a second power different from the first power.

公开(公告)号：US20240048870A1

公开(公告)日：2024-02-08

申请号：US18354162

申请日：2023-07-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sunyool KANG ,  Haesick SUL ,  Yunhwan JUNG ,  Yongjun CHO ,  Heesung CHAE

IPC: H04N25/772 ,  H03M1/34 ,  H03M1/12

CPC classification number: H04N25/772 ,  H03M1/34 ,  H03M1/1205

Abstract: Provided are analog-digital converting circuits including a comparator, and an image sensor. The analog-digital converting circuit include a counter and a comparator, the comparator including a first P-type transistor including a gate connected to a first input node of the comparator, a second P-type transistor including a gate connected to a second input node of the comparator, a first N-type transistor including a gate connected to the first input node and a drain connected to the first P-type transistor, a second N-type transistor including a gate connected to the second input node and a drain connected to the second P-type transistor, and a transistor including a gate connected to the drain of the first N-type transistor and a source to which ground voltage or power supply voltage is applied.

公开(公告)号：US20210382513A1

公开(公告)日：2021-12-09

申请号：US17150316

申请日：2021-01-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyung-Min KIM ,  Haesick SUL ,  Sunyool KANG ,  Yunhong KIM ,  Seungmin SUH ,  Hyeonji LEE ,  Yunhwan JUNG

IPC: G05F3/26 ,  G05F1/46

Abstract: Disclosed is a bandgap reference circuit, which includes a first current generator that generates a first current proportional to a temperature, a second current generator that outputs a second current obtained by mirroring the first current to a first node at which a reference voltage is formed, a first resistor that is connected with the first node and is supplied with the second current, and a first bipolar junction transistor (BJT) that includes an emitter node connected with the first resistor, a base node supplied with a first power, and a collector node supplied with a second power different from the first power.