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公开(公告)号:US11709518B2
公开(公告)日:2023-07-25
申请号:US17150316
申请日:2021-01-15
Applicant: Samsung Electronics Co., Ltd.
Inventor: Kyung-Min Kim , Haesick Sul , Sunyool Kang , Yunhong Kim , Seungmin Suh , Hyeonji Lee , Yunhwan Jung
Abstract: Disclosed is a bandgap reference circuit, which includes a first current generator that generates a first current proportional to a temperature, a second current generator that outputs a second current obtained by mirroring the first current to a first node at which a reference voltage is formed, a first resistor that is connected with the first node and is supplied with the second current, and a first bipolar junction transistor (BJT) that includes an emitter node connected with the first resistor, a base node supplied with a first power, and a collector node supplied with a second power different from the first power.