摘要:
A bandgap circuit that is area efficient and has a low power consumption. The bandgap circuit includes a voltage generator circuit, and a sample and hold circuit coupled to the voltage generator circuit. The voltage generator circuit includes a pair of transistors each connected in a diode configuration and biased with a respective current source of a plurality of current sources of the voltage generator circuit. During a sample phase, the sample and hold circuit samples a first voltage between a first base and a first emitter of a first transistor of the pair of transistors and a second voltage between a second base and a second emitter of a second transistor of the pair of transistors. During a hold phase subsequent to the sample phase, the sample and hold circuit generates an output voltage as a combination of the sampled first and second voltages.
摘要:
A radio frequency switch generator applicable to 1.8 V and 1.2 V power supplies, which relates to the technical field of radio frequency switches. The present invention comprises a bandgap reference circuit, a linear voltage regulator circuit, a boost circuit, a ring oscillator circuit and a negative voltage circuit; wherein both the boost circuit and the ring oscillator circuit adopt an independent linear voltage stabilizing circuit as a power supply voltage source; square signals generated by the ring oscillator circuit are regarded as input signals of the boost circuit and the negative voltage circuit; and positive voltage is finally obtained after the boost circuit is subjected to double boosting twice, and negative voltage is finally obtained after the negative voltage circuit is subjected to three-level cascading.
摘要:
An integrated circuit device having insulated gate field effect transistors (IGFETs) having a plurality of horizontally disposed channels that can be vertically aligned above a substrate with each channel being surrounded by a gate structure has been disclosed. The integrated circuit device may include a temperature sensor circuit and core circuitry. The temperature senor circuit may include at least one portion formed in a region other than the region that the IGFETs are formed as well as at least another portion formed in the region that the IGFETs having a plurality of horizontally disposed channels that can be vertically aligned above a substrate with each channel being surrounded by a gate structure are formed. By forming a portion of the temperature sensor circuit in regions below the IGFETs, an older process technology may be used and device size may be decreased and cost may be reduced.
摘要:
Disclosed is a bandgap reference circuit, which includes a first current generator that generates a first current proportional to a temperature, a second current generator that outputs a second current obtained by mirroring the first current to a first node at which a reference voltage is formed, a first resistor that is connected with the first node and is supplied with the second current, and a first bipolar junction transistor (BJT) that includes an emitter node connected with the first resistor, a base node supplied with a first power, and a collector node supplied with a second power different from the first power.
摘要:
A current reference circuit includes a voltage generating device, a resistor, one or more diodes, and a thermal bridge including one or more metal alloy contacts disposed on a substrate. The voltage generating device and the resistor have similar temperature coefficients. The diodes are thermally connected to the voltage generating device through the substrate. The metal alloy contacts are coupled between the diodes and the resistor. The diodes form a reverse bias junction when the compensation circuit is energized such that the thermal bridge may provide thermal conduction between the voltage generating device and the resistor.
摘要:
Circuits for generating a PTAT voltage as a base-emitter voltage difference between a pair of bipolar transistors. The circuits may form unit cells in a cascading voltage reference circuit that increases the PTAT voltage with each subsequent stage. The bipolar transistors are controlled using a biasing arrangement that includes an MOS transistor connected to a current mirror that provides the base current for the bipolar transistors. A voltage reference is formed by combining a PTAT voltage and a CTAT voltage at the last stage. The voltage reference may be obtained from the voltage at an emitter of one of the bipolar transistors in the last stage.
摘要:
Example current tracking circuits and systems as well as methods for tracking current are described herein. In one example, a current tracking circuit comprises a current mirror that receives a power supply input and a control signal as inputs, wherein the current mirror has a mirror ratio. The current tracking circuit also comprises a programmability sub-circuit coupled to the current mirror that trims a value of the mirror ratio. In another example, a method comprises performing current mirroring using a current mirror comprising a sense device, wherein a mirror ratio of the current mirror is based on a programmable sub-circuit. The method further comprises maintaining, by a voltage regulation loop, a collector potential of the sense device within a threshold difference level of a collector potential of a power device coupled to the sense device, wherein the sense device mirrors a current flowing in the power device.
摘要:
Circuits for generating a PTAT voltage as a base-emitter voltage difference between a pair of bipolar transistors. The circuits may form unit cells in a cascading voltage reference circuit that increases the PTAT voltage with each subsequent stage. The bipolar transistors are controlled using a biasing arrangement that includes an MOS transistor connected to a current mirror that provides the base current for the bipolar transistors. A voltage reference is formed by combining a PTAT voltage and a CTAT voltage at the last stage. The voltage reference may be obtained from the voltage at an emitter of one of the bipolar transistors in the last stage.
摘要:
Example current tracking circuits and systems as well as methods for tracking current are described herein. In one example, a current tracking circuit comprises a current mirror that receives a power supply input and a control signal as inputs, wherein the current mirror has a mirror ratio. The current tracking circuit also comprises a programmability sub-circuit coupled to the current mirror that trims a value of the mirror ratio. In another example, a method comprises performing current mirroring using a current mirror comprising a sense device, wherein a mirror ratio of the current mirror is based on a programmable sub-circuit. The method further comprises maintaining, by a voltage regulation loop, a collector potential of the sense device within a threshold difference level of a collector potential of a power device coupled to the sense device, wherein the sense device mirrors a current flowing in the power device.
摘要:
A current source with low power consumption and reduced on-chip area occupancy. The current source for providing a constant current to a load includes a first circuit that generates a reference current. The first circuit includes a first plurality of interconnected transistors. The current source also includes a characteristic resistor, coupled to the first circuit, that determines value of the reference current. The current source further includes a second circuit and a third circuit. The second circuit, coupled to the first circuit and to the load, generates an output current that is identical to the reference current. The second circuit includes a second plurality of interconnected transistors. The third circuit, coupled to the first circuit, drives a multiple of the reference current into the characteristic resistor. The third circuit includes a third plurality of interconnected transistors.