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    Image sensors including pixel groups and electronic devices including image sensors
    5.
    发明授权
    Image sensors including pixel groups and electronic devices including image sensors 有权

    公开(公告)号：US11044427B2

    公开(公告)日：2021-06-22

    申请号：US16841796

    申请日：2020-04-07

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Eunsub Shim ,  Seyoung Kim ,  Sanghyuck Moon

    IPC: H04N5/355

    Abstract: An image sensor includes first photodiodes sharing a first node that is connected to a first capacitor, second photodiodes sharing a second node that is connected to a second capacitor, a common transistor configured to selectively connect a third node to a pixel voltage node, the third node connected to a third capacitor, a first reset transistor that may selectively connect the first node to the third node, and a second reset transistor that may selectively connect the second node to the third node. The first reset transistor and the second reset transistor may electrically connect the first node, the second node, and the third node to each other according to an operation of the first reset transistor and the second reset transistor. The common transistor is configured to reset the third node to the pixel voltage according to an operation of the common transistor.

    IMAGE SENSORS INCLUDING PIXEL GROUPS AND ELECTRONIC DEVICES INCLUDING IMAGE SENSORS
    6.
    发明申请
    IMAGE SENSORS INCLUDING PIXEL GROUPS AND ELECTRONIC DEVICES INCLUDING IMAGE SENSORS 审中-公开

    公开(公告)号：US20200322553A1

    公开(公告)日：2020-10-08

    申请号：US16841796

    申请日：2020-04-07

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Eunsub Shim ,  Seyoung Kim ,  Sanghyuck Moon

    IPC: H04N5/355

    Abstract: An image sensor includes first photodiodes sharing a first node that is connected to a first capacitor, second photodiodes sharing a second node that is connected to a second capacitor, a common transistor configured to selectively connect a third node to a pixel voltage node, the third node connected to a third capacitor, a first reset transistor that may selectively connect the first node to the third node, and a second reset transistor that may selectively connect the second node to the third node. The first reset transistor and the second reset transistor may electrically connect the first node, the second node, and the third node to each other according to an operation of the first reset transistor and the second reset transistor. The common transistor is configured to reset the third node to the pixel voltage according to an operation of the common transistor.

    INTEGRATED CIRCUIT DEVICE
    7.
    发明申请
    INTEGRATED CIRCUIT DEVICE 有权

    公开(公告)号：US20250142850A1

    公开(公告)日：2025-05-01

    申请号：US18783982

    申请日：2024-07-25

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Seyoung Kim ,  Dahee Kim ,  Hongseon Song ,  Wanggon Lee ,  Sukjin Chung ,  Beomjong Kim

    IPC: H10B12/00

    Abstract: Provided is an integrated circuit device including a lower electrode, a dielectric layer on the lower electrode, an upper electrode facing the lower electrode with the dielectric layer therebetween, and an interfacial structure between the dielectric layer and the upper electrode, wherein the interfacial structure includes a first interfacial layer and a second interfacial layer, and a high band gap interfacial layer between the first interfacial layer and the second interfacial layer, wherein a third band gap of the high band gap interfacial layer is greater than a first band gap of the first interfacial layer and is greater than a second band gap of the second interfacial layer.

    Image sensors including pixel groups and electronic devices including image sensors
    8.
    发明授权
    Image sensors including pixel groups and electronic devices including image sensors 有权

    公开(公告)号：US11265489B2

    公开(公告)日：2022-03-01

    申请号：US17326587

    申请日：2021-05-21

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Eunsub Shim ,  Seyoung Kim ,  Sanghyuck Moon

    IPC: H04N5/355

    Abstract: An image sensor includes first photodiodes sharing a first node that is connected to a first capacitor, second photodiodes sharing a second node that is connected to a second capacitor, a common transistor configured to selectively connect a third node to a pixel voltage node, the third node connected to a third capacitor, a first reset transistor that may selectively connect the first node to the third node, and a second reset transistor that may selectively connect the second node to the third node. The first reset transistor and the second reset transistor may electrically connect the first node, the second node, and the third node to each other according to an operation of the first reset transistor and the second reset transistor. The common transistor is configured to reset the third node to the pixel voltage according to an operation of the common transistor.

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