公开(公告)号：US20190055647A1

公开(公告)日：2019-02-21

申请号：US16104311

申请日：2018-08-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sukjin Chung ,  Bongjin Kuh ,  Kook Tae Kim ,  In-Sun Yi ,  Soojin Hong

IPC: C23C16/44 ,  C23C16/458

CPC classification number: C23C16/4408 ,  C23C16/4404 ,  C23C16/4405 ,  C23C16/45578 ,  C23C16/4584

Abstract: Disclosed are a substrate processing apparatus and a method of cleaning the apparatus. The apparatus includes a process chamber, a support unit in the process chamber and configured to support a substrate, and a gas injection unit in the process chamber. The gas injection unit includes a first injection portion configured to inject a source gas, a second injection portion facing the first injection portion and configured to inject a reaction gas that reacts with the source gas, and a third injection portion configured to inject a cleaning gas that removes a reactant produced from the source gas and the reaction gas.

公开(公告)号：US09951422B2

公开(公告)日：2018-04-24

申请号：US15285926

申请日：2016-10-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jaechul Shin ,  JongCheol Lee ,  Geunkyu Choi ,  MinHwa Jung ,  Sukjin Chung

IPC: C23C16/455 ,  C23C16/40 ,  C23C16/44 ,  H01L21/02 ,  C23C16/458 ,  C23C16/52 ,  H01L21/67

CPC classification number: C23C16/45565 ,  C23C16/4412 ,  C23C16/458 ,  C23C16/52 ,  H01L21/67017 ,  H01L21/67253

Abstract: A semiconductor device manufacturing apparatus includes a shower head at a top of a chamber, a gas supplying part on the shower head, a susceptor in the chamber, and a gas exhausting part under the chamber. The chamber has first and second reaction spaces that are virtually separated from each other. A first gas supply pipe supplies a first gas into the first reaction space and a second gas supply pipe supplies a second gas into the second reaction space. A first gas exhausting pipe is adjacent the first reaction space and a second gas exhausting pipe is adjacent the second reaction space on opposite sides of the susceptor. A first gas sensor connected to the first gas exhausting pipe senses the second gas and a second gas sensor connected to the second gas exhausting pipe senses the first gas.

公开(公告)号：US20170218515A1

公开(公告)日：2017-08-03

申请号：US15285926

申请日：2016-10-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jaechul Shin ,  JongCheol Lee ,  Geunkyu Choi ,  MinHwa Jung ,  Sukjin Chung

IPC: C23C16/455 ,  H01L21/67 ,  C23C16/52 ,  C23C16/44 ,  C23C16/458

CPC classification number: C23C16/45565 ,  C23C16/4412 ,  C23C16/458 ,  C23C16/52 ,  H01L21/67017 ,  H01L21/67253

Abstract: A semiconductor device manufacturing apparatus includes a shower head at a top of a chamber, a gas supplying part on the shower head, a susceptor in the chamber, and a gas exhausting part under the chamber. The chamber has first and second reaction spaces that are virtually separated from each other. A first gas supply pipe supplies a first gas into the first reaction space and a second gas supply pipe supplies a second gas into the second reaction space. A first gas exhausting pipe is adjacent the first reaction space and a second gas exhausting pipe is adjacent the second reaction space on opposite sides of the susceptor. A first gas sensor connected to the first gas exhausting pipe senses the second gas and a second gas sensor connected to the second gas exhausting pipe senses the first gas.

公开(公告)号：US20170121820A1

公开(公告)日：2017-05-04

申请号：US15289619

申请日：2016-10-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sukjin Chung ,  JongCheol Lee ,  MinHwa Jung ,  Jaechul Shin ,  In-Sun Yi ,  Geunkyu Choi ,  Jungil Ahn ,  Seung Han Lee ,  Jin Pil Heo

IPC: C23C16/52 ,  C23C16/44 ,  C23C16/455

CPC classification number: C23C16/52 ,  C23C16/4412 ,  C23C16/45544 ,  C23C16/45551 ,  C23C16/45563

Abstract: A substrate processing system may include a process chamber in which a process on a substrate is performed, a supporting unit in the process chamber to support the substrate, a gas supply unit including a gas supply part with gas supply holes, with the gas supply holes being configured to supply a process gas onto the substrate, and an exhaust unit configured to exhaust the process gas from the process chamber. The gas supply part may include a gas supply region provided with the gas supply holes and a gas diffusion region between the gas supply region and the exhaust unit. The gas diffusion region may be free of the gas supply holes.

公开(公告)号：US20250142850A1

公开(公告)日：2025-05-01

申请号：US18783982

申请日：2024-07-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seyoung Kim ,  Dahee Kim ,  Hongseon Song ,  Wanggon Lee ,  Sukjin Chung ,  Beomjong Kim

IPC: H10B12/00

Abstract: Provided is an integrated circuit device including a lower electrode, a dielectric layer on the lower electrode, an upper electrode facing the lower electrode with the dielectric layer therebetween, and an interfacial structure between the dielectric layer and the upper electrode, wherein the interfacial structure includes a first interfacial layer and a second interfacial layer, and a high band gap interfacial layer between the first interfacial layer and the second interfacial layer, wherein a third band gap of the high band gap interfacial layer is greater than a first band gap of the first interfacial layer and is greater than a second band gap of the second interfacial layer.

公开(公告)号：US10822694B2

公开(公告)日：2020-11-03

申请号：US16104311

申请日：2018-08-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sukjin Chung ,  Bongjin Kuh ,  Kook Tae Kim ,  In-Sun Yi ,  Soojin Hong

IPC: C23C16/44 ,  C23C16/458 ,  C23C16/455

Abstract: Disclosed are a substrate processing apparatus and a method of cleaning the apparatus. The apparatus includes a process chamber, a support unit in the process chamber and configured to support a substrate, and a gas injection unit in the process chamber. The gas injection unit includes a first injection portion configured to inject a source gas, a second injection portion facing the first injection portion and configured to inject a reaction gas that reacts with the source gas, and a third injection portion configured to inject a cleaning gas that removes a reactant produced from the source gas and the reaction gas.

公开(公告)号：US11854864B2

公开(公告)日：2023-12-26

申请号：US17530169

申请日：2021-11-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Juyeon Kim ,  Hanmei Choi ,  Sukjin Chung ,  Bongjin Kuh ,  Changyong Kim ,  Hakyu Seong

IPC: H01L21/762 ,  H01L21/02

CPC classification number: H01L21/76229 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/02238 ,  H01L21/76237

Abstract: A semiconductor device includes a plurality of patterns defined between a plurality of trenches and disposed on a substrate. A leaning control layer is disposed on sidewalls and bottoms of the plurality of trenches. A gap-fill insulating layer is disposed on the leaning control layer. At least one of the plurality of trenches has a different depth from one of the plurality of trenches adjacent thereto.

公开(公告)号：US11211284B2

公开(公告)日：2021-12-28

申请号：US16780810

申请日：2020-02-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Juyeon Kim ,  Hanmei Choi ,  Sukjin Chung ,  Bongjin Kuh ,  Changyong Kim ,  Hakyu Seong

IPC: H01L21/762 ,  H01L21/02

Abstract: A semiconductor device includes a plurality of patterns defined between a plurality of trenches and disposed on a substrate. A leaning control layer is disposed on sidewalls and bottoms of the plurality of trenches. A gap-fill insulating layer is disposed on the leaning control layer. At least one of the plurality of trenches has a different depth from one of the plurality of trenches adjacent thereto.

公开(公告)号：US10607832B2

公开(公告)日：2020-03-31

申请号：US16164953

申请日：2018-10-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Junyeong Lee ,  Soonwook Jung ,  Bongjin Kuh ,  Pyung Moon ,  Sukjin Chung

IPC: H01L21/00 ,  H01L21/02 ,  H01L21/3205 ,  H01L21/3105 ,  H01L21/306

Abstract: Disclosed are method and apparatus for forming a thin layer. The method for forming the thin layer comprises providing a substrate including patterns, forming a bonding layer on the substrate covering an inner surface of a gap between the patterns, forming a preliminary layer on the bonding layer filling the gap; and thermally treating the preliminary layer to form the thin layer. The bonding layer is a self-assembled monomer layer formed using an organosilane monomer. The preliminary layer is formed from a flowable composition comprising polysilane.