SEMICONDUCTOR MEMORY INCLUDING PADS ARRANGED IN PARALLEL

    公开(公告)号:US20190181109A1

    公开(公告)日:2019-06-13

    申请号:US16036198

    申请日:2018-07-16

    Abstract: A semiconductor memory includes a plurality of first pads arranged in a first direction, a plurality of second pads arranged parallel to the plurality of first pads and in the first direction, a plurality of third pads arranged in a second direction perpendicular to the first direction, and a plurality of fourth pads arranged in the second direction. The semiconductor memory further includes first interconnection wires extending from the plurality of first pads in the second direction, the first interconnection wires being connected to the plurality of third pads, and second interconnection wires extending from the plurality of second pads in an opposite direction to the second direction, the second interconnection wires being connected to the plurality of fourth pads.

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