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公开(公告)号：US20180190821A1
公开(公告)日：2018-07-05
申请号：US15889803
申请日：2018-02-06
发明人： Sung-Soo KIM , Gi-Gwan PARK , Song-E KIM , Koung-Min RYU , Sun-Ki MIN
IPC分类号： H01L29/78 , H01L29/06 , H01L29/417
CPC分类号： H01L29/7855 , H01L29/0657 , H01L29/41791 , H01L29/7843 , H01L29/7846 , H01L29/7853 , H01L29/7854
摘要： A semiconductor device is provided which includes a first fin-type pattern including a first side surface and a second side surface opposite to each other, a first trench of a first depth adjacent to the first side surface, a second trench of a second depth adjacent to the second side surface. The second depth differs from the first depth, and a first field insulating film partially fills the first trench and a second field insulating film partially fills the second trench. The first fin-type pattern has a lower portion, and an upper portion having a narrower width than the lower portion, and has a first stepped portion on a boundary between the upper portion and the lower portion. The first field insulating film includes a first lower field insulating film in contact with the lower portion, and a first upper field insulating film in contact with the upper portion.
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公开(公告)号：US20180102429A1
公开(公告)日：2018-04-12
申请号：US15812527
申请日：2017-11-14
发明人： Sung-soo KIM , Song-E KIM , Koung-Min RYU , Sun-Ki Min
CPC分类号： H01L29/785 , H01L27/1233 , H01L29/66795 , H01L29/7846 , H01L29/7854
摘要： A semiconductor device is provided that includes a deep trench defining an active region, and a fin-type pattern protruding within the active region. The fin-type pattern having a lower portion, an upper portion of a narrower width than the lower portion, and a first stepped portion formed at a boundary between the upper portion and the lower portion. The device also includes a first field insulating film surrounding the lower portion and a second field insulating film formed on the first field insulating film and partially surrounding the upper portion.
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