公开(公告)号：US20250056794A1

公开(公告)日：2025-02-13

申请号：US18653191

申请日：2024-05-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dongkyun Lim ,  Soobin Kim ,  Seungyoung Seo ,  Sunwoo Heo

IPC: H10B12/00 ,  H01L23/522 ,  H01L23/528

Abstract: A semiconductor device includes a substrate including a cell region and a peripheral circuit region, a peripheral circuit gate line on the peripheral circuit region of the substrate, an interlayer insulating layer surrounding the peripheral circuit gate line, a contact plug passing through the interlayer insulating layer to be connected to the substrate, a wiring pad on the contact plug, and a metal via being in contact with the wiring pad, wherein a first sidewall and a second sidewall of the contact plug form acute angles with an upper surface of the contact plug, and a first sidewall and a second sidewall of the wiring pad form acute angles with a lower surface of the wiring pad.

公开(公告)号：US11796960B2

公开(公告)日：2023-10-24

申请号：US17011080

申请日：2020-09-03

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  Korea University Research and Business Foundation, Sejong Campus

Inventor： Yunhee Kim ,  Hwi Kim ,  Hoon Song ,  Soobin Kim ,  Hongseok Lee

IPC: G02B5/18 ,  G03H1/22

CPC classification number: G03H1/2294 ,  G03H1/2205 ,  G03H2001/2239 ,  G03H2222/22 ,  G03H2223/15 ,  G03H2223/18 ,  G03H2223/19 ,  G03H2223/24 ,  G03H2225/23

Abstract: Provided is a holographic display apparatus capable of providing an expanded viewing window when reproducing a holographic image via an off-axis technique. The holographic display apparatus includes a spatial light modulator comprising a plurality of pixels arranged two-dimensionally; and an aperture enlargement film configured to enlarge a beam diameter of a light beam coming from each of the plurality of pixels of the spatial light modulator. The beam diameter of each light beam enlarged by the aperture enlargement film may be greater than the width of an aperture of each pixel of the spatial light modulator.

公开(公告)号：US20240306376A1

公开(公告)日：2024-09-12

申请号：US18391828

申请日：2023-12-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dongkyun Lim ,  Sunwoo Heo ,  Soobin Kim ,  Jinsub Kim ,  Seungyoung Seo ,  Taeyong Song

IPC: H10B12/00

CPC classification number: H10B12/485 ,  H10B12/315 ,  H10B12/482

Abstract: A semiconductor device includes a substrate including an active region; a cell gate structure disposed in the substrate, crossing the active region, and extending in a first horizontal direction; bitline structures crossing the cell gate structure and extending in a second horizontal direction intersecting the first horizontal direction; a contact plug disposed between the bitline structures; a landing pad structure disposed on the contact plug and including a lower landing pad and an upper landing pad on the lower landing pad, wherein the upper landing pad includes a cavity; a conductive pattern disposed in the cavity of the upper landing pad; and an insulating pattern structure in contact with one of the bitline structures and in contact with the landing pad structure.