公开(公告)号：US20170176348A1

公开(公告)日：2017-06-22

申请号：US15449423

申请日：2017-03-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Choonshik LEEM ,  Chungsam JUN

IPC: G01N21/956 ,  G01N21/88 ,  H01L21/66 ,  G01N21/21

CPC classification number: G01N21/956 ,  G01N21/211 ,  G01N21/8806 ,  G01N2021/8848 ,  G01N2201/0683 ,  G01N2201/12 ,  H01L21/76816 ,  H01L21/76877 ,  H01L22/12

Abstract: An ellipsometer includes a stage, a light source, a polarizer, a detector, and a processor. The stage is configured to support a substrate including a pattern. The light source is configured to emit illumination toward the substrate. The polarizer is configured to polarize the illumination. The detector is configured to generate, in association with a plurality of azimuthal angles, data corresponding to polarized illumination reflected from the substrate. The processor is configured to: control rotation of the stage in association with sequential inspection of the pattern at the plurality of azimuthal angles, and determine asymmetry of the pattern based on the data. Each azimuthal angle of the plurality of azimuthal angles corresponds to a different rotational state of the stage.

公开(公告)号：US20240353350A1

公开(公告)日：2024-10-24

申请号：US18626396

申请日：2024-04-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kihong CHUNG ,  Gucheol KWON ,  Jaejoon KIM ,  Haemin JEONG ,  Minjae HUH ,  Hidong KWAK ,  Taejung PARK ,  Jihye LEE ,  Choonshik LEEM

IPC: G01N21/95 ,  G01N21/21 ,  G01N21/88 ,  H01L21/66

CPC classification number: G01N21/9501 ,  G01N21/211 ,  G01N21/8851 ,  H01L22/12 ,  G01N2021/8887

Abstract: A wafer abnormality detection method including: calculating a residual spectrum between a measured spectrum for a wafer and a predicted spectrum for the wafer; and performing machine learning to determine whether measurement data, which corresponds to the residual data, is abnormal.

公开(公告)号：US20180254225A1

公开(公告)日：2018-09-06

申请号：US15969247

申请日：2018-05-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Choonshik LEEM ,  Jihye Lee ,  Deokyong Kim ,  Soobok Chin

IPC: H01L21/66 ,  G01N21/95 ,  G01N21/956 ,  H01J37/28

CPC classification number: H01L22/12 ,  G01B2210/56 ,  G01N21/9501 ,  G01N21/95607 ,  G01N21/95684 ,  H01J37/28 ,  H01J2237/24578 ,  H01J2237/24592

Abstract: The measurement method may include obtaining first measurement data from a recess region formed in a semiconductor substrate, obtaining second measurement data from a conductive pattern filling a portion of the recess region, calculating a first volume of the recess region from the first measurement data, calculating a second volume of the conductive pattern from the second measurement data, and calculating a measurement target parameter using a difference between the first and second volumes.