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公开(公告)号:US20230177815A1
公开(公告)日:2023-06-08
申请号:US17820911
申请日:2022-08-19
Applicant: Samsung Electronics Co., Ltd.
Inventor: Sangchul Yeo , Jaewon Yang , Hyeok Lee , Sooryong Lee
IPC: G06V10/776 , G06T3/60 , G06V10/774
CPC classification number: G06V10/776 , G06T3/60 , G06V10/774
Abstract: A method of training a semiconductor process image generator includes training the semiconductor process image generator with a plurality of mask images including a first group and a second group, training the semiconductor process image generator with the second group and a first transformed group obtained by applying a transformation to the first group, and training the semiconductor process image generator with the first group and a second transformed group obtained by applying a transformation to the second group.
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2.
公开(公告)号:US20230196545A1
公开(公告)日:2023-06-22
申请号:US17849617
申请日:2022-06-25
Applicant: Samsung Electronics Co., Ltd.
Inventor: Hyeok Lee , Jaewon Yang , Sangchul Yeo , Eunju Kim , Sooryong Lee
CPC classification number: G06T7/0006 , G06V10/46 , G06V10/10 , G06F30/27 , G06T2207/20081 , G06T2207/30148
Abstract: An operating method of a computing device for predicting a profile using deep learning includes sampling a unique pattern in a full chip, extracting a contour of a resist profile of each of a plurality of heights by performing rigorous simulation corresponding to the unique pattern, preparing an input image and an output image corresponding to the contour of each of the plurality of heights, performing deep learning on the extracted contour using the input image and the output image, and generating a profile prediction model according to performing of the deep leaning.
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3.
公开(公告)号:US12299869B2
公开(公告)日:2025-05-13
申请号:US17849617
申请日:2022-06-25
Applicant: Samsung Electronics Co., Ltd.
Inventor: Hyeok Lee , Jaewon Yang , Sangchul Yeo , Eunju Kim , Sooryong Lee
IPC: G06T19/00 , A61B6/00 , A61B6/02 , G06F3/04815 , G06F3/04842 , G06F30/27 , G06T7/00 , G06V10/10 , G06V10/46
Abstract: An operating method of a computing device for predicting a profile using deep learning includes sampling a unique pattern in a full chip, extracting a contour of a resist profile of each of a plurality of heights by performing rigorous simulation corresponding to the unique pattern, preparing an input image and an output image corresponding to the contour of each of the plurality of heights, performing deep learning on the extracted contour using the input image and the output image, and generating a profile prediction model according to performing of the deep leaning.
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公开(公告)号:US12229944B2
公开(公告)日:2025-02-18
申请号:US17842206
申请日:2022-06-16
Applicant: Samsung Electronics Co., Ltd.
Inventor: Kyenhee Lee , Mincheol Kang , Sooryong Lee
Abstract: The inventive concept provides a defect detection method of a semiconductor element, capable of promptly and accurately detecting a defect, and predicting a type of the defect with respect to various defects of the semiconductor element, and a semiconductor element manufacturing method including the defect detection method. The defect detection method is capable of promptly and accurately detecting the defect, and predicting the type of the defect with respect to various defects of the semiconductor element, by generating a first segmentation image and a second segmentation image; converting the first segmentation image and the second segmentation image into an image of a first color and a second color, respectively; generating a combination image; classifying the type of a defect; generating a defect detection model by using deep learning, and detecting a defect of the semiconductor element by using a defect detection process using the defect detection model.
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