公开(公告)号：US20250078929A1

公开(公告)日：2025-03-06

申请号：US18679809

申请日：2024-05-31

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kibong MOON ,  Suck-Soo KIM ,  Tae Hun KIM ,  Hyoje BANG ,  Seung Jae BAIK ,  Sung-Bok LEE ,  Jaeduk LEE ,  Junhee LIM

IPC: G11C16/04 ,  G11C5/06 ,  H01L25/065 ,  H10B41/10 ,  H10B41/27 ,  H10B41/35 ,  H10B41/41 ,  H10B43/10 ,  H10B43/27 ,  H10B43/35 ,  H10B43/40 ,  H10B80/00

Abstract: A semiconductor device may include a substrate, a plurality of cell strings perpendicular to an upper surface of the substrate, and a bit line connected to at least six of the cell strings. Each of the cell strings may include a plurality of memory cells connected in series to each other in a direction perpendicular to the upper surface of the substrate, first to fourth ground selection transistors connected in series to each other between the plurality of memory cells and the substrate, and a string selection transistor between the plurality of memory cells and the bit line. A first one of the first to fourth selection ground selection transistors may have a first threshold voltage distribution, and a second one of the first to fourth ground selection transistors may have a second threshold voltage distribution. The second threshold voltage distribution may be different from the first threshold voltage distribution.