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公开(公告)号：US20240188294A1
公开(公告)日：2024-06-06
申请号：US18232948
申请日：2023-08-11
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Sam Ki KIM , Nam Bin KIM , Ji Woong KIM , Tae Hun KIM , Sae Rom LEE , Jun Hee LIM , Nag Yong CHOI , Sun Gyung HWANG
Abstract: A semiconductor memory device comprising a substrate including a cell array area and an extension area, a mold structure including, a plurality of gate electrodes sequentially stacked on the cell array area of the substrate and stacked in a stair shape on the extension area of the substrate, and a plurality of mold insulating films stacked alternately with the plurality of gate electrodes, a plurality of channel structures on the cell array area of the substrate, wherein each of the plurality of channel structures extends through the mold structure and intersects the plurality of gate electrodes, a plurality of cell contacts on the extension area of the substrate and respectively connected to the plurality of gate electrodes, a first interlayer insulating film on the mold structure so as to cover the plurality of channel structures and the plurality of cell contacts.
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公开(公告)号：US20200243721A1
公开(公告)日：2020-07-30
申请号：US16845438
申请日：2020-04-10
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Ju Heon YOON , Jung Hwan KIL , Tae Hun KIM , Hwa Ryong SONG , Jae In SIM
Abstract: A semiconductor light emitting device includes a light-emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer, a first transparent electrode layer on the second conductivity-type semiconductor layer, a first insulating layer on the first transparent electrode layer, the first insulating layer including a plurality of through-holes, a reflective electrode layer on the first insulating layer and connected to the first transparent electrode layer through the plurality of through-holes, and a transparent protection layer covering upper and side surfaces of the reflective electrode layer, the transparent protection layer being on a portion of the first insulating layer.
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公开(公告)号：US20200097043A1
公开(公告)日：2020-03-26
申请号：US16425171
申请日：2019-05-29
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Hee Bong KIM , Tae Hun KIM , Yong Gu DO , Gil Jae LEE , Pil Kwon JUNG
Abstract: Provided is a display device including a display panel configured to display an image forward. The display device includes a top chassis arranged on the front of the display panel; a bottom chassis arranged on the back of the display panel; a rear cover covering the back of the bottom chassis; and a stand unit including a stand provided to support the display device, a locking device provided to lock the stand to be pulled in between the bottom chassis and the rear cover, and a rotation guide provided to rotate at least a portion of the stand, wherein the rear cover includes a through hole formed for the stand to move vertically, and the stand is locked in the locking device and pulled in between the bottom chassis and the rear cover, or the stand is pulled out of the display device through the through hole.
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公开(公告)号：US20170280516A1
公开(公告)日：2017-09-28
申请号：US15505817
申请日：2015-04-29
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Min Gyu JUNG , Hyeong Jin JANG , Kun Woo CHOI , Tae Hun KIM , In Ki JEON , Sang Jin JEONG , Yu Jeub HA , Dong Gi HAN
CPC classification number: H05B6/6473 , F24C15/00 , F24C15/322 , F24C15/325 , H05B6/00 , H05B6/6447 , H05B6/80
Abstract: In accordance with one embodiment of the present disclosure, a cooking apparatus includes a casing, a cooking chamber formed inside the casing, a duct member formed outside the cooking chamber to extend from a first plate of the cooking chamber to a second plate forming an upper surface of the cooking chamber, a heater installed inside the duct member, and a fan installed inside the duct member and configured to blow air in the duct member, wherein the cooking chamber is formed to cook food using high-temperature air discharged into the cooking chamber through a first outlet part formed at the second plate.
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公开(公告)号：US20240188293A1
公开(公告)日：2024-06-06
申请号：US18229296
申请日：2023-08-02
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Sam Ki KIM , Nam Bin KIM , Ji Woong KIM , Tae Hun KIM , Ki Bong MOON , Sae Rom LEE , Sung-Bok LEE , Jun Hee LIM , Nag Yong CHOI , Sun Gyung HWANG
Abstract: A semiconductor memory device including a substrate; a mold structure including gate electrodes and mold insulating layers stacked in a stair shape, channel structures on the substrate, intersecting the gate electrodes, and passing through the mold structure; cell contacts connected to the gate electrodes; a first interlayer insulating layer on the mold structure and covering the channel structures and cell contacts; first metal patterns connected to the channel structures, an upper surface of the first metal patterns being coplanar with an upper surface of the first interlayer insulating layer; second metal patterns connected to the cell contacts, an upper surface of the second metal patterns being coplanar with the upper surface of the first metal patterns; a first blocking layer along the upper surface of the first interlayer insulating layer, the first metal patterns, and the second metal patterns; and a first dummy vias passing through the first blocking layer.
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Patent Agency Ranking
公开(公告)号：US20220139954A1
公开(公告)日：2022-05-05
申请号：US17575947
申请日：2022-01-14
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Joo-Heon KANG , Tae Hun KIM , Jae Ryong SIM , Kwang Young JUNG , Gi Yong CHUNG , Jee Hoon HAN , Doo Hee HWANG
IPC: H01L27/11582 , H01L27/1157
Abstract: A semiconductor memory device includes a third insulating pattern and a first insulating pattern on a substrate, the third insulating pattern and the first insulating pattern being spaced apart from each other in a first direction that is perpendicular to the substrate such that a bottom surface of the third insulating pattern and a top surface of the first insulating pattern face each other, a gate electrode between the bottom surface of the third insulating pattern and the top surface of the first insulating pattern, and including a first side extending between the bottom surface of the third insulating pattern and the top surface of the first insulating pattern, and a second insulating pattern that protrudes from the first side of the gate electrode by a second width in a second direction, the second direction being different from the first direction.
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公开(公告)号：US20220028837A1
公开(公告)日：2022-01-27
申请号：US17493975
申请日：2021-10-05
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Ji Hwan HWANG , Ji Hoon KIM , Ji Seok HONG , Tae Hun KIM , Hyuek Jae LEE
IPC: H01L25/065 , H01L23/00 , H01L23/48 , H01L21/768 , H01L25/00
Abstract: A semiconductor package includes a base structure having a base pad, a first semiconductor chip on the base structure, and having a first connection pad bonded to the base pad, a first bonding structure including an base insulation layer of a base structure and a first lower insulation layer of the first semiconductor chip bonded to the base insulation layer, a second semiconductor chip on the first semiconductor chip, and having a second connection pad connected to the first through-electrode, and a second bonding structure including a first upper insulation layer of the first semiconductor chip, and a second lower insulation layer of the second semiconductor chip bonded to the first upper insulation layer, and the first upper insulation layer has a dummy insulation portion extending onto the base structure around the first semiconductor chip.
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公开(公告)号：US20160365497A1
公开(公告)日：2016-12-15
申请号：US15139930
申请日：2016-04-27
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Tae Hun KIM , Myong Soo CHO , Jung Hee KWAK , Yeon Ji KIM , Yong Seok KIM , Tae Kang KIM
IPC: H01L33/62 , H01L33/46 , H01L25/075
CPC classification number: H01L33/62 , H01L24/00 , H01L25/0753 , H01L33/38
Abstract: A light emitting device package includes: a package board including a first electrode structure and a second electrode structure; and a light emitting device mounted on the package board and configured to emit light, the light emitting device including: light emitting structures provided on a growth substrate, electrically connected in series, and including an input terminal and an output terminal; a first solder pad and a second solder pad electrically connected to the input terminal and the output terminal, respectively, and in contact with the first and second electrode structures; and dummy solder pads provided on the light emitting structures and electrically insulated from the light emitting structures.
Abstract translation: 发光器件封装包括：包括第一电极结构和第二电极结构的封装板; 以及安装在所述封装板上并被配置为发光的发光器件，所述发光器件包括：设置在生长衬底上的发光结构，其串联电连接，并且包括输入端子和输出端子; 分别与输入端子和输出端子电连接并与第一和第二电极结构接触的第一焊盘和第二焊盘; 以及设置在发光结构上并与发光结构电绝缘的虚拟焊盘。
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公开(公告)号：US20150108520A1
公开(公告)日：2015-04-23
申请号：US14454612
申请日：2014-08-07
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Tae Hun KIM , Ki Seok KIM , Chan Mook LIM , Tae Kang KIM
CPC classification number: H01L33/40 , H01L33/145 , H01L33/38 , H01L2224/48091 , H01L2224/48227 , H01L2224/48237 , H01L2224/48465 , H01L2224/49107 , H01L2224/73265 , H01L2924/181 , H01L2924/00014 , H01L2924/00012 , H01L2924/00
Abstract: A semiconductor light emitting device includes a light emitting structure and first and second electrodes. The light emitting structure includes first and second conductivity type semiconductor layers and an active layer interposed therebetween. The first and second electrodes are electrically connected to the first and second conductivity type semiconductor layers. The second electrode includes a current blocking layer, a reflective part disposed on the current blocking layer, a transparent electrode layer disposed on the second conductivity type semiconductor layer, a pad electrode part disposed within a region of the current blocking layer, and at least one finger electrode part disposed at least in part on the transparent electrode layer. The transparent electrode layer can be spaced apart from the reflective part, and have an opening surrounding the reflective part. In some examples, the transparent electrode layer can further be spaced apart from the current blocking layer.
Abstract translation: 半导体发光器件包括发光结构和第一和第二电极。 发光结构包括第一和第二导电类型的半导体层和介于它们之间的有源层。 第一和第二电极电连接到第一和第二导电类型半导体层。 第二电极包括电流阻挡层，设置在电流阻挡层上的反射部分，设置在第二导电类型半导体层上的透明电极层，设置在电流阻挡层的区域内的焊盘电极部分，以及至少一个 指状电极部分至少部分地设置在透明电极层上。 透明电极层可以与反射部分间隔开，并且具有围绕反射部分的开口。 在一些示例中，透明电极层可以进一步与电流阻挡层间隔开。
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公开(公告)号：US20140209956A1
公开(公告)日：2014-07-31
申请号：US14152128
申请日：2014-01-10
Applicant: Samsung Electronics Co., Ltd.
Inventor： Myong Soo CHO , Tae Hun KIM , Young Ho RYU , Young Chul SHIN , Dong Myung SHIN
IPC: H01L33/36
CPC classification number: H01L33/382
Abstract: In one example embodiment, a semiconductor light emitting device includes a light emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer. The second conductivity-type semiconductor layer and the active layer having at least one contact hole exposing a region of the first conductivity-type semiconductor layer. The semiconductor light emitting device further includes at least one columnar structure disposed in the exposed region of the first conductivity-type semiconductor layer within the at least one contact hole. The semiconductor light emitting device further includes a first electrode disposed on the exposed region of the first conductivity-type semiconductor layer in which the at least one columnar structure is disposed, the first electrode being connected to the first conductivity-type semiconductor layer. The semiconductor light emitting device further includes a second electrode connected to the second conductivity-type semiconductor layer.
Abstract translation: 在一个示例性实施例中，半导体发光器件包括包括第一导电类型半导体层，有源层和第二导电类型半导体层的发光结构。 所述第二导电型半导体层和所述有源层具有暴露所述第一导电型半导体层的区域的至少一个接触孔。 半导体发光器件还包括设置在至少一个接触孔内的第一导电类型半导体层的暴露区域中的至少一个柱状结构。 半导体发光器件还包括设置在其中设置有至少一个柱状结构的第一导电类型半导体层的暴露区域上的第一电极，第一电极连接到第一导电型半导体层。 半导体发光器件还包括连接到第二导电类型半导体层的第二电极。
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