公开(公告)号：US20240079047A1

公开(公告)日：2024-03-07

申请号：US18459266

申请日：2023-08-31

Applicant: Samsung Electronics Co., Ltd.

Inventor： Suhwan Choi ,  Younghun Seo ,  Sangyun Kim

IPC: G11C11/408 ,  G11C11/4091 ,  G11C11/4097 ,  G11C11/4099

CPC classification number: G11C11/4085 ,  G11C11/4091 ,  G11C11/4097 ,  G11C11/4099

Abstract: A memory device includes a plurality of sub-array areas each including a plurality of memory cells, a plurality of contact areas located between the plurality of sub-array areas, a plurality of word lines each extending in a first direction to cross the plurality of sub-array areas and the plurality of contact areas, and a plurality of sub-word line drivers beneath the plurality of sub-array areas and configured to drive the plurality of word lines, wherein each of the plurality of contact areas comprises a plurality of contacts electrically connecting a corresponding word line, among the plurality of word lines, to a sub-word line driver.