公开(公告)号：US09640545B2

公开(公告)日：2017-05-02

申请号：US14171074

申请日：2014-02-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kwang Soo Seol ,  Sukpil Kim ,  Yoondong Park

IPC: H01L27/11556 ,  H01L27/11551 ,  G11C16/04 ,  H01L27/11519

CPC classification number: H01L27/11565 ,  G11C16/0408 ,  H01L23/5226 ,  H01L23/528 ,  H01L27/11519 ,  H01L27/11524 ,  H01L27/11551 ,  H01L27/11556 ,  H01L27/1157 ,  H01L27/11582

Abstract: A non-volatile memory device can include a plurality of immediately adjacent offset vertical NAND channels that are electrically coupled to a single upper select gate line or to a single lower select gate line of the non-volatile memory device.