公开(公告)号：US20180210421A1

公开(公告)日：2018-07-26

申请号：US15867939

申请日：2018-01-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： WOOTAE KIM ,  Hyung-Ock Kim ,  Jaehoon Kim ,  Naya Ha ,  Ki-Ok Kim ,  Eunbyeol Kim ,  Jung Yun Choi ,  Sun Ik Heo

IPC: G05B19/4097 ,  G06F17/50

CPC classification number: G05B19/4097 ,  G05B2219/45031 ,  G06F17/5072 ,  G06F2217/12 ,  Y02P90/265

Abstract: A method of manufacturing an integrated circuit (IC) including instances of standard cells includes arranging a first instance and arranging a second instance adjacent to the first instance. The second instance has a front-end layer pattern corresponding to a context group of the first instance. The context group includes information about front-end layer patterns of instances, the front-end layer patterns causing a same local layout effect (LLE) on the first instance and arranged adjacent to the first instance.

公开(公告)号：US10599130B2

公开(公告)日：2020-03-24

申请号：US15867939

申请日：2018-01-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Wootae Kim ,  Hyung-Ock Kim ,  Jaehoon Kim ,  Naya Ha ,  Ki-Ok Kim ,  Eunbyeol Kim ,  Jung Yun Choi ,  Sun Ik Heo

IPC: G06F17/50 ,  G05B19/4097

Abstract: A method of manufacturing an integrated circuit (IC) including instances of standard cells includes arranging a first instance and arranging a second instance adjacent to the first instance. The second instance has a front-end layer pattern corresponding to a context group of the first instance. The context group includes information about front-end layer patterns of instances, the front-end layer patterns causing a same local layout effect (LLE) on the first instance and arranged adjacent to the first instance.

公开(公告)号：US20230325571A1

公开(公告)日：2023-10-12

申请号：US18149749

申请日：2023-01-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Juyeon Kim ,  Jaehoon Kim ,  Sun Ik Heo ,  Jun Seomun ,  Hyun-Seung Seo ,  Chul Rim ,  Chang Ho Han

IPC: G06F30/392

CPC classification number: G06F30/392 ,  G06F2119/12

Abstract: A cell library is provided. The cell library is stored in a computer-readable storage medium. The cell library is configured to store: first delay information of a standard cell according to a threshold voltage of a transistor included in the standard cell; and second delay information of the standard cell according to mobility of the transistor included in the standard cell.