公开(公告)号：US10587566B2

公开(公告)日：2020-03-10

申请号：US15810727

申请日：2017-11-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung Eun Kim ,  Dong Jae Shin ,  Yo Han Lee ,  Doo Suk Kang ,  Yong Joon Jeon ,  Eun Jung Hyun

IPC: H04L12/66 ,  H04L12/58 ,  H04L29/06 ,  H04W88/06 ,  H04W4/14 ,  H04W48/18 ,  G06F3/12 ,  H04W4/80

Abstract: An electronic device includes a display, a communication interface, a processor electrically connected with the display and the communication interface, and a memory electrically connected with the processor. The memory stores instructions that cause the processor to execute a message transmission application configured to transmit or receive data through a first communication mode, select at least one message thread from a list of messages transmitted and received in the message transmission application, and establish a channel according to a second communication mode with an external electronic device based on identification information of the external electronic device associated with the selected message thread.

公开(公告)号：US11563002B2

公开(公告)日：2023-01-24

申请号：US16418366

申请日：2019-05-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jin Woo Kim ,  Choelhwyi Bae ,  Yang Gyeom Kim ,  Sung Eun Kim ,  Sang Woo Pae ,  Hyun Chui Sagong

IPC: H01L27/092 ,  H01L27/11 ,  H01L29/40 ,  H01L21/8238 ,  H01L21/28 ,  H01L21/765 ,  H01L29/49

Abstract: A semiconductor device includes a first fin that protrudes from a substrate and extends in a first direction, a second fin that protrudes from the substrate and extends in the first direction, the first fin and the second fin being spaced apart, a gate line including a dummy gate electrode and a gate electrode, the dummy gate electrode at least partially covering the first fin, the gate electrode at least partially covering the second fin, the dummy gate electrode including different materials from the gate electrode, the gate line covering the first fin and the second fin, the gate line extending in a second direction different from the first direction, and a gate dielectric layer between the gate electrode and the second fin.

公开(公告)号：US11245018B2

公开(公告)日：2022-02-08

申请号：US16415633

申请日：2019-05-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyun Chul Sagong ,  Sung Eun Kim ,  Jin Woo Kim ,  June Kyun Park ,  Sang Woo Pae ,  Ki Hyun Choi

IPC: H01L29/423 ,  H01L27/088 ,  H01L27/02 ,  H01L27/092 ,  H01L27/11 ,  H01L29/66 ,  H01L21/8234 ,  H01L21/84

Abstract: A semiconductor device may include an active region extending primarily in a first direction on a substrate. A gate structure may be disposed to intersect the active region, and extend primarily in a second direction intersecting the first direction. A gate isolation pattern may contact one end of the gate structure. The gate structure may include a plurality of portions each having different widths in the first direction, and the gate isolation pattern may have a width greater than a width of at least one of the plurality of portions of the gate structure.