公开(公告)号：US11121148B2

公开(公告)日：2021-09-14

申请号：US16912894

申请日：2020-06-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kang Min Kim ,  Jin Hyuk Kim ,  Jung Tae Sung ,  Joong Shik Shin ,  Sung Hyung Lee

IPC: H01L27/11578 ,  H01L29/06 ,  H01L29/08 ,  G11C7/18

Abstract: A semiconductor device includes a first substrate including a cell region and surrounded by an extension region, a common source plate on the first substrate, a supporter on the common source plate, a first stack structure on the supporter and including an alternately stacked first insulating film and first gate electrode, a channel hole penetrating the first stack structure, the supporter, and the common source plate on the cell region, and an electrode isolation trench spaced apart from the channel hole in a first direction on the cell region, extending in a second direction, and penetrating the first stack structure, the supporter, and the common source plate, wherein a first thickness of the supporter in a first region adjacent to the electrode isolation trench is greater than a second thickness of the supporter in a second region formed between the electrode isolation trench and the channel hole.

公开(公告)号：US11723200B2

公开(公告)日：2023-08-08

申请号：US17399239

申请日：2021-08-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kang Min Kim ,  Jin Hyuk Kim ,  Jung Tae Sung ,  Joong Shik Shin ,  Sung Hyung Lee

IPC: H10B43/20 ,  H01L29/06 ,  H01L29/08 ,  G11C7/18

CPC classification number: H10B43/20 ,  G11C7/18 ,  H01L29/0649 ,  H01L29/0847

Abstract: A semiconductor device includes a first substrate including a cell region and surrounded by an extension region, a common source plate on the first substrate, a supporter on the common source plate, a first stack structure on the supporter and including an alternately stacked first insulating film and first gate electrode, a channel hole penetrating the first stack structure, the supporter, and the common source plate on the cell region, and an electrode isolation trench spaced apart from the channel hole in a first direction on the cell region, extending in a second direction, and penetrating the first stack structure, the supporter, and the common source plate, wherein a first thickness of the supporter in a first region adjacent to the electrode isolation trench is greater than a second thickness of the supporter in a second region formed between the electrode isolation trench and the channel hole.