公开(公告)号：US12046631B2

公开(公告)日：2024-07-23

申请号：US18065986

申请日：2022-12-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung Sik Park ,  Sang Jin Kim ,  Tae Hwan Oh ,  Hyun Jeong Lee ,  Sung Jin Jang ,  Gyu Min Jeong

IPC: H01L27/01 ,  H01L21/762 ,  H01L27/12 ,  H01L29/06 ,  H01L29/66 ,  H01L31/0392 ,  H01L21/8234

CPC classification number: H01L29/0649 ,  H01L21/76224 ,  H01L29/6656 ,  H01L29/66795 ,  H01L21/823431

Abstract: A semiconductor device includes first and second active patterns extending in a first direction, a first epitaxial pattern on the first active pattern and adjacent to the second active pattern, a second epitaxial pattern on the second active pattern and adjacent to the first active pattern, an element separation structure separating the first and second active patterns between the first and second epitaxial patterns, and including a core separation pattern, and a separation side wall pattern on a side wall of the core separation pattern, and a gate structure extending in a second direction intersecting the first direction, on the first active pattern. An upper surface of the gate structure is on the same plane as an upper surface of the core separation pattern. The separation side wall pattern includes a high dielectric constant liner, which includes a high dielectric constant dielectric film including a metal.

公开(公告)号：US20220013630A1

公开(公告)日：2022-01-13

申请号：US17363861

申请日：2021-06-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung Sik Park ,  Sang Jin Kim ,  Tae Hwan Oh ,  Hyun Jeong Lee ,  Sung Jin Jang ,  Gyu Min Jeong

IPC: H01L29/06 ,  H01L29/66 ,  H01L21/762

Abstract: A semiconductor device includes first and second active patterns extending in a first direction, a first epitaxial pattern on the first active pattern and adjacent to the second active pattern, a second epitaxial pattern on the second active pattern and adjacent to the first active pattern, an element separation structure separating the first and second active patterns between the first and second epitaxial patterns, and including a core separation pattern, and a separation side wall pattern on a side wall of the core separation pattern, and a gate structure extending in a second direction intersecting the first direction, on the first active pattern. An upper surface of the gate structure is on the same plane as an upper surface of the core separation pattern. The separation side wall pattern includes a high dielectric constant liner, which includes a high dielectric constant dielectric film including a metal.

公开(公告)号：US10427966B2

公开(公告)日：2019-10-01

申请号：US15514477

申请日：2015-09-02

Applicant: Samsung Electronics Co., Ltd

Inventor： Jeong Soo Yea ,  Sang Jun Jung ,  Kyong Rok Kang ,  Dong Oh Min ,  In Youl Seo ,  Sung Jin Jang

IPC: C03B23/035 ,  C03B23/03 ,  C03B35/14 ,  C03B23/023

Abstract: Disclosed here are a glass forming apparatus and a method of forming a glass. A glass forming apparatus of the present invention includes a transfer unit which moves a material, a preheating unit which preheats the material supplied by the transfer unit, a curved surface forming unit which forms the material in a curved shape, and a cooling unit which cools the material in the curved shape transformed by the curved surface forming unit, wherein the curved surface forming unit includes a moving mold in which a plurality of curved surface-shaped cores configured to seat the preheated material are formed and the moving mold is provided to be movable, a first mold disposed to face the moving mold, a plurality of cavities formed between the moving mold and the first mold, and a pneumatic device which generates a vacuum pressure in the plurality of cavities to adhere the material to the curved surface-shaped cores.

公开(公告)号：US11552167B2

公开(公告)日：2023-01-10

申请号：US17363861

申请日：2021-06-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung Sik Park ,  Sang Jin Kim ,  Tae Hwan Oh ,  Hyun Jeong Lee ,  Sung Jin Jang ,  Gyu Min Jeong

IPC: H01L27/01 ,  H01L27/12 ,  H01L31/0392 ,  H01L29/06 ,  H01L29/66 ,  H01L21/762 ,  H01L21/8234

Abstract: A semiconductor device includes first and second active patterns extending in a first direction, a first epitaxial pattern on the first active pattern and adjacent to the second active pattern, a second epitaxial pattern on the second active pattern and adjacent to the first active pattern, an element separation structure separating the first and second active patterns between the first and second epitaxial patterns, and including a core separation pattern, and a separation side wall pattern on a side wall of the core separation pattern, and a gate structure extending in a second direction intersecting the first direction, on the first active pattern. An upper surface of the gate structure is on the same plane as an upper surface of the core separation pattern. The separation side wall pattern includes a high dielectric constant liner, which includes a high dielectric constant dielectric film including a metal.

公开(公告)号：US20170297944A1

公开(公告)日：2017-10-19

申请号：US15514477

申请日：2015-09-02

Applicant: Samsung Electronics Co., Ltd

Inventor： Jeong Soo Yea ,  Sang Jun Jung ,  Kyong Rok Kang ,  Dong Oh Min ,  In Youl Seo ,  Sung Jin Jang

IPC: C03B23/035 ,  C03B23/03

CPC classification number: C03B23/035 ,  C03B23/0235 ,  C03B23/0302 ,  C03B23/0357 ,  C03B35/142 ,  Y02P40/57

Abstract: Disclosed here are a glass forming apparatus and a method of forming a glass. A glass forming apparatus of the present invention includes a transfer unit which moves a material, a preheating unit which preheats the material supplied by the transfer unit, a curved surface forming unit which forms the material in a curved shape, and a cooling unit which cools the material in the curved shape transformed by the curved surface forming unit, wherein the curved surface forming unit includes a moving mold in which a plurality of curved surface-shaped cores configured to seat the preheated material are formed and the moving mold is provided to be movable, a first mold disposed to face the moving mold, a plurality of cavities formed between the moving mold and the first mold, and a pneumatic device which generates a vacuum pressure in the plurality of cavities to adhere the material to the curved surface-shaped cores.