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公开(公告)号：US20220013630A1
公开(公告)日：2022-01-13
申请号：US17363861
申请日：2021-06-30
发明人： Sung Sik Park , Sang Jin Kim , Tae Hwan Oh , Hyun Jeong Lee , Sung Jin Jang , Gyu Min Jeong
IPC分类号： H01L29/06 , H01L29/66 , H01L21/762
摘要： A semiconductor device includes first and second active patterns extending in a first direction, a first epitaxial pattern on the first active pattern and adjacent to the second active pattern, a second epitaxial pattern on the second active pattern and adjacent to the first active pattern, an element separation structure separating the first and second active patterns between the first and second epitaxial patterns, and including a core separation pattern, and a separation side wall pattern on a side wall of the core separation pattern, and a gate structure extending in a second direction intersecting the first direction, on the first active pattern. An upper surface of the gate structure is on the same plane as an upper surface of the core separation pattern. The separation side wall pattern includes a high dielectric constant liner, which includes a high dielectric constant dielectric film including a metal.
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公开(公告)号：US11552167B2
公开(公告)日：2023-01-10
申请号：US17363861
申请日：2021-06-30
发明人： Sung Sik Park , Sang Jin Kim , Tae Hwan Oh , Hyun Jeong Lee , Sung Jin Jang , Gyu Min Jeong
IPC分类号： H01L27/01 , H01L27/12 , H01L31/0392 , H01L29/06 , H01L29/66 , H01L21/762 , H01L21/8234
摘要： A semiconductor device includes first and second active patterns extending in a first direction, a first epitaxial pattern on the first active pattern and adjacent to the second active pattern, a second epitaxial pattern on the second active pattern and adjacent to the first active pattern, an element separation structure separating the first and second active patterns between the first and second epitaxial patterns, and including a core separation pattern, and a separation side wall pattern on a side wall of the core separation pattern, and a gate structure extending in a second direction intersecting the first direction, on the first active pattern. An upper surface of the gate structure is on the same plane as an upper surface of the core separation pattern. The separation side wall pattern includes a high dielectric constant liner, which includes a high dielectric constant dielectric film including a metal.
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公开(公告)号：US12046631B2
公开(公告)日：2024-07-23
申请号：US18065986
申请日：2022-12-14
发明人： Sung Sik Park , Sang Jin Kim , Tae Hwan Oh , Hyun Jeong Lee , Sung Jin Jang , Gyu Min Jeong
IPC分类号： H01L27/01 , H01L21/762 , H01L27/12 , H01L29/06 , H01L29/66 , H01L31/0392 , H01L21/8234
CPC分类号： H01L29/0649 , H01L21/76224 , H01L29/6656 , H01L29/66795 , H01L21/823431
摘要： A semiconductor device includes first and second active patterns extending in a first direction, a first epitaxial pattern on the first active pattern and adjacent to the second active pattern, a second epitaxial pattern on the second active pattern and adjacent to the first active pattern, an element separation structure separating the first and second active patterns between the first and second epitaxial patterns, and including a core separation pattern, and a separation side wall pattern on a side wall of the core separation pattern, and a gate structure extending in a second direction intersecting the first direction, on the first active pattern. An upper surface of the gate structure is on the same plane as an upper surface of the core separation pattern. The separation side wall pattern includes a high dielectric constant liner, which includes a high dielectric constant dielectric film including a metal.
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公开(公告)号：US12006614B2
公开(公告)日：2024-06-11
申请号：US17250862
申请日：2019-09-10
发明人： Hyeon Joo Kim , Jin Young Choi , Eung Ryeol Seo , Sang Jin Kim , Kyoung-Woong Noh , Dong Bum Lee
CPC分类号： D06F34/08 , D06F58/10 , D06F58/20 , D06F73/02 , H05K7/2039 , H05K5/0091
摘要： Disclosed is a clothes care apparatus capable of preventing the spreading of fire when a fire occurs on a printed circuit board (PCB) assembly. The clothes care apparatus may comprise: a PCB assembly; a PCB housing having an accommodation space for accommodating the PCB assembly, the PCB housing including a sidewall that forms the accommodation space; and a protective body filled into the accommodation space to cover the PCB assembly, wherein the sidewall may include guide wall having a height lower than or equal to a height of the protective body filled in the accommodation space.
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公开(公告)号：US11028526B2
公开(公告)日：2021-06-08
申请号：US16537260
申请日：2019-08-09
发明人： Dong Bum Lee , Sang Jin Kim , Eung Ryeol Seo
摘要： A clothes care apparatus capable of improving cooling performance of a printed circuit board assembly includes a body, a first chamber provided inside the body and configured to receive clothes, a second chamber provided inside the body but separated from the first chamber, a printed circuit board housing configured to form one side wall of the second chamber and provided with a receiving space separated from the second chamber in the second chamber, the receiving space to which air outside the body flows, and a printed circuit board assembly arranged in the receiving space to be cooled by air flowing into the receiving space from the outside of the body.
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公开(公告)号：US10553438B2
公开(公告)日：2020-02-04
申请号：US15409813
申请日：2017-01-19
发明人： Yun Kyeong Jang , Sang Jin Kim , Dong Woon Park , Joon Soo Park , Chang Jae Yang , Kwang Sub Yoon , Hye Kyoung Jue
IPC分类号： H01L21/28 , H01L21/033 , H01L21/8234
摘要： A method for fabricating a semiconductor device includes stacking a semiconductor layer, a first sacrificial layer, and a second sacrificial layer, patterning the second sacrificial layer to form a second sacrificial pattern, forming a spacer pattern on both sides of the second sacrificial pattern, wherein a pitch of the spacer pattern is constant, and a width of the spacer pattern is constant, removing the second sacrificial pattern, forming a mask layer that covers the spacer pattern, forming a supporting pattern on the mask layer, wherein a width of the supporting pattern is greater than a width of the spacer pattern, and the supporting pattern is overlapped with the spacer pattern, transferring the supporting pattern and the spacer pattern onto the first sacrificial layer to form gate and supporting patterns, and transferring the gate and supporting patterns onto the semiconductor layer to form a gate and a supporting gate.
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