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公开(公告)号:US20230291240A1
公开(公告)日:2023-09-14
申请号:US18149474
申请日:2023-01-03
Applicant: Samsung Electronics Co., Ltd.
Inventor: Hyun Su Kim , Sung Woo Moon
CPC classification number: H02J50/10 , H02M3/1588 , H02M7/4835 , H02J2207/20
Abstract: A wireless charging receiver and wireless charging system comprising the same is provided. A wireless charging receiver may be configured to wirelessly receive electrical power from a wireless charging transmitter. The wireless charging receiver may include an inductor inductively coupled to the wireless charging transmitter, a rectifier connected to the inductor and configured to rectify a signal received from the inductor, a DC-DC converter configured to convert a DC signal received from the rectifier, a switching block configured to receive a common voltage generated from the DC-DC converter and including a first switch, and a first capacitor configured to receive the common voltage from the switching block and connected to the inductor at a first node n1, wherein the common voltage is not zero (0).
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公开(公告)号:US11183945B2
公开(公告)日:2021-11-23
申请号:US16846559
申请日:2020-04-13
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Takahiro Nomiyama , Sung Woo Moon , Yus Ko
Abstract: Provided are a semiconductor device and a method of operating the same. A semiconductor device may include a comparator which compares a first voltage with a rectified voltage and provides a second voltage in accordance with the comparison. A timer circuit may operate a timer according to the second voltage and output a third voltage in correspondence with an operation time of the timer. A driver may drive a transistor with a fourth voltage generated by the driver according to the third voltage. A calibration circuit may generate a timer calibration signal based on the second voltage and the fourth voltage. The timer calibration signal may be provided to the timer circuit and used to calibrate the operation time of the timer. More efficient rectification, with reduced occurrence of reverse current, may thereby be realized.
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公开(公告)号:US20200244180A1
公开(公告)日:2020-07-30
申请号:US16846559
申请日:2020-04-13
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: TAKAHIRO NOMIYAMA , Sung Woo Moon , Yus Ko
Abstract: Provided are a semiconductor device and a method of operating the same. A semiconductor device may include a comparator which compares a first voltage with a rectified voltage and provides a second voltage in accordance with the comparison. A timer circuit may operate a timer according to the second voltage and output a third voltage in correspondence with an operation time of the timer. A driver may drive a transistor with a fourth voltage generated by the driver according to the third voltage. A calibration circuit may generate a timer calibration signal based on the second voltage and the fourth voltage. The timer calibration signal may be provided to the timer circuit and used to calibrate the operation time of the timer. More efficient rectification, with reduced occurrence of reverse current, may thereby be realized.
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4.
公开(公告)号:US09983605B2
公开(公告)日:2018-05-29
申请号:US15230849
申请日:2016-08-08
Applicant: Samsung Electronics Co., Ltd.
Inventor: Hoang Quoc Duong , Sung Woo Moon , Hyun Seok Shin , Dong Jin Keum
IPC: G05F1/575
CPC classification number: G05F1/575
Abstract: A voltage regulator may include an error amplifier configured to amplify a difference between a reference voltage and a feedback voltage and generate a first amplified voltage based thereon; a power transistor between a second voltage supply node and an output node of the voltage regulator, the power transistor including a gate configured to receive a gate voltage; a buffer between a first voltage supply node and a ground, the buffer configured to generate the gate voltage based on the first amplified voltage; a voltage divider between the output node and the ground, the voltage divider configured to generate the feedback voltage based on the output voltage; and a control circuit configured to connect the output node to the ground through the gate of the power transistor based on the output voltage and the gate voltage.
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