-
公开(公告)号:US20230291240A1
公开(公告)日:2023-09-14
申请号:US18149474
申请日:2023-01-03
Applicant: Samsung Electronics Co., Ltd.
Inventor: Hyun Su Kim , Sung Woo Moon
CPC classification number: H02J50/10 , H02M3/1588 , H02M7/4835 , H02J2207/20
Abstract: A wireless charging receiver and wireless charging system comprising the same is provided. A wireless charging receiver may be configured to wirelessly receive electrical power from a wireless charging transmitter. The wireless charging receiver may include an inductor inductively coupled to the wireless charging transmitter, a rectifier connected to the inductor and configured to rectify a signal received from the inductor, a DC-DC converter configured to convert a DC signal received from the rectifier, a switching block configured to receive a common voltage generated from the DC-DC converter and including a first switch, and a first capacitor configured to receive the common voltage from the switching block and connected to the inductor at a first node n1, wherein the common voltage is not zero (0).
-
公开(公告)号:US11209896B2
公开(公告)日:2021-12-28
申请号:US16381240
申请日:2019-04-11
Applicant: Samsung Electronics Co., Ltd.
Inventor: Min Kyu Kwon , Hyoung Seok Oh , Hyun Su Kim , Tae Jin Jeong , Dae Woong Cho
IPC: G06F1/32 , G06F1/3296 , G06F1/3212
Abstract: Provided are a semiconductor device and a method for operating the semiconductor device. A semiconductor device includes a low power condition module which determines whether a system operated by a battery satisfies enter and exit conditions of a low power mode; an address module which identifies a predetermined own address; a low power set module which sets a detailed operation mode of the low power mode in accordance with the address identified by the address module; a debounce module which executes a debounce operation before the system entering the low power mode; and a low power enter/exit module which executes entry and exit of the low power mode of the system.
-
公开(公告)号:US11111579B2
公开(公告)日:2021-09-07
申请号:US16386970
申请日:2019-04-17
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Sun Yong Hwang , Hyun Su Kim , Eun-Ok Lee , Taek Jung Kim , Hyo Jung Noh , Ji Won Yu
IPC: C23C16/40 , C23C16/455 , C23C16/44
Abstract: A deposition equipment is provided. The deposition equipment includes: a reaction chamber including an upper plate and a container body, the upper plate including a gas supplier for injecting a processing gas; a wafer chuck including an upper surface on which a wafer is loaded, in the reaction chamber, with the upper surface of the wafer chuck facing the upper plate; and a processing gas shielding section which prevents the processing gas from being adsorbed to the upper surface of the wafer chuck and is disposed between the upper plate and the wafer chuck in a state in which the wafer is removed from the wafer chuck. The processing gas shielding section includes a shutter which is plate-like, and the shutter includes a region including a gas discharge section for jetting a purging gas toward the wafer chuck.
-
公开(公告)号:US20200073471A1
公开(公告)日:2020-03-05
申请号:US16381240
申请日:2019-04-11
Applicant: Samsung Electronics Co., Ltd.
Inventor: Min Kyu Kwon , Hyoung Seok Oh , Hyun Su Kim , Tae Jin Jeong , Dae Woong Cho
IPC: G06F1/3296 , G06F1/3212
Abstract: Provided are a semiconductor device and a method for operating the semiconductor device. A semiconductor device includes a low power condition module which determines whether a system operated by a battery satisfies enter and exit conditions of a low power mode; an address module which identifies a predetermined own address; a low power set module which sets a detailed operation mode of the low power mode in accordance with the address identified by the address module; a debounce module which executes a debounce operation before the system entering the low power mode; and a low power enter/exit module which executes entry and exit of the low power mode of the system.
-
公开(公告)号:US10121660B2
公开(公告)日:2018-11-06
申请号:US15428365
申请日:2017-02-09
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: So Young Lee , Hyun Su Kim , Jong Won Hong
IPC: H01L21/033 , H01L21/768 , H01L23/528 , H01L23/532 , H01L21/311 , H01L21/027 , H01L23/544 , H01L23/522 , H01L21/308
Abstract: A method of fabricating a semiconductor device includes forming a metal film including Cu on a substrate, forming a protective film on the metal film, forming a hard mask including TaOx, where x is 2.0 to 2.5, on the protective film, forming a hard mask pattern by patterning the hard mask, and forming a metal wiring by patterning the metal film, using the hard mask pattern as an etching mask.
-
-
-
-