公开(公告)号：US20250142811A1

公开(公告)日：2025-05-01

申请号：US18890123

申请日：2024-09-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyojin PARK ,  Jinbum KIM ,  Sung-Hwan JANG ,  Dae-Jin NAM ,  Sunguk JANG

IPC: H10B12/00

Abstract: A semiconductor memory device may include bit lines spaced apart from each other in a first direction on a substrate and extending in a second direction, a first active pattern and a second active pattern on the bit lines and are spaced apart from each other in the second direction, and first and second word lines between the first active and second active patterns. The first and second word lines respectively may be adjacent to the first and second active patterns. The first active pattern and/or the second active pattern may include a body portion extending in a third direction and a protruding portion protruding from an upper end of the body portion in the third direction. The protruding portion may have a width in the second direction that is greater than that of the body portion. The third direction may differ from the first and second directions.

公开(公告)号：US20240421232A1

公开(公告)日：2024-12-19

申请号：US18586125

申请日：2024-02-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Suk YANG ,  Sung-Hwan JANG ,  Do Hee KIM ,  Jin Bum KIM ,  Sung Uk JANG ,  Inhae ZOH

IPC: H01L29/786 ,  H01L29/06 ,  H01L29/423 ,  H01L29/66 ,  H01L29/78

Abstract: A semiconductor device includes a lower pattern extending in a first direction, a plurality of wire patterns spaced apart from the lower pattern in a second direction on the lower pattern, and a gate electrode surrounding the plurality of wire patterns and extending in a third direction, on the lower pattern. Each of the plurality of wire patterns includes a transition metal dichalcogenide (TMD) material. Each of the plurality of wire patterns includes a pair of first areas protruding from sidewalls of the gate electrode in the first direction and a second area between the first areas. A phase of the first area is different from a phase of the second area.

公开(公告)号：US20250040245A1

公开(公告)日：2025-01-30

申请号：US18602827

申请日：2024-03-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Suk YANG ,  Sung-Hwan JANG ,  Jinbum KIM ,  Sunguk JANG

IPC: H01L27/118

Abstract: A semiconductor device includes a substrate, a first device region on the substrate, a second device region on the substrate and spaced apart from the first device region in a first direction, a first dummy region between the first device region and the second device region, and an insulating pattern in the first device region, the second device region and the first dummy region, where the first dummy region includes a seed pattern on the insulating pattern, and a seed mask pattern at least partially covering a top surface of the seed pattern and extending from the top surface of the seed pattern along a first sidewall of the seed pattern, where the insulating pattern in the first dummy region is on the substrate, and where the seed pattern includes a transition metal dichalcogenide.

公开(公告)号：US20250016993A1

公开(公告)日：2025-01-09

申请号：US18428207

申请日：2024-01-31

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung-Hwan JANG ,  Guifu YANG ,  Jinbum KIM ,  Sunguk JANG

IPC: H10B12/00

Abstract: A semiconductor device includes a substrate including a recess region; a bit line contact in the recess region; a bit line on the bit line contact, the bit line extending in a first direction; a first insulating pattern covering side surfaces of the bit line contact and an inner surface of the recess region; and a second insulating pattern on the first insulating pattern, wherein an oxygen density of the first insulating pattern is higher than an oxygen density of the second insulating pattern.