公开(公告)号：US20240258203A1

公开(公告)日：2024-08-01

申请号：US18459588

申请日：2023-09-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seonhaeng LEE ,  Hyunggyun NOH ,  Sung-Mock HA

IPC: H01L23/48 ,  H01L23/498 ,  H01L25/065

CPC classification number: H01L23/481 ,  H01L23/49816 ,  H01L23/49838 ,  H01L25/0657 ,  H01L2225/06544

Abstract: A semiconductor device may include a substrate having a first surface and a second surface opposite to the first surface, a protection layer on the first surface of the substrate, metal layers in the substrate, extending in a first direction parallel to the first surface, and spaced apart from each other in a second direction perpendicular to the first surface, a via structure vertically penetrating the metal layers and the substrate, a circuit layer on the second surface of the substrate, and a connection terminal on a bottom surface of the circuit layer. Each of the metal layers may have a tetragonal or circular shape, when viewed in a plan view.