公开(公告)号：US10770473B2

公开(公告)日：2020-09-08

申请号：US16122037

申请日：2018-09-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung-Yun Lee ,  Jae-Hoon Jang ,  Jae-Duk Lee ,  Joon-Hee Lee ,  Young-Jin Jung

IPC: H01L27/11556 ,  H01L27/11582 ,  H01L21/768 ,  H01L21/308 ,  H01L21/28 ,  H01L27/11565

Abstract: A vertical type semiconductor device includes insulation patterns on a substrate and spaced apart from each other in a first direction perpendicular to a top surface of the substrate, a channel structure on the substrate and penetrating through the insulation patterns, a first conductive pattern partially filling a gap between the insulation patterns adjacent to each other in the first direction and the channel structure and having a slit in a surface thereof, the slit extending in a direction parallel with the top surface of the substrate, and a second conductive pattern on the first conductive pattern in the gap and filling the slit.

公开(公告)号：US11411024B2

公开(公告)日：2022-08-09

申请号：US16995084

申请日：2020-08-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung-Yun Lee ,  Jae-Hoon Jang ,  Jae-Duk Lee ,  Joon-Hee Lee ,  Young-Jin Jung

IPC: H01L27/11556 ,  H01L27/11582 ,  H01L21/768 ,  H01L21/308 ,  H01L21/28 ,  H01L27/11565

Abstract: A vertical type semiconductor device includes insulation patterns on a substrate and spaced apart from each other in a first direction perpendicular to a top surface of the substrate, a channel structure on the substrate and penetrating through the insulation patterns, a first conductive pattern partially filling a gap between the insulation patterns adjacent to each other in the first direction and the channel structure and having a slit in a surface thereof, the slit extending in a direction parallel with the top surface of the substrate, and a second conductive pattern on the first conductive pattern in the gap and filling the slit.