公开(公告)号：US09685230B2

公开(公告)日：2017-06-20

申请号：US15205498

申请日：2016-07-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae-kyu Lee ,  Sung-in Kim

IPC: G11C16/26 ,  G11C13/00

CPC classification number: G11C13/0069 ,  G11C11/161 ,  G11C11/1655 ,  G11C11/1673 ,  G11C11/1675 ,  G11C13/0002 ,  G11C13/0026 ,  G11C13/0028 ,  G11C13/004 ,  G11C16/26 ,  G11C2013/0045 ,  G11C2013/0078 ,  G11C2213/79 ,  G11C2213/82 ,  H01L27/228

Abstract: A resistive memory device resistive memory device includes a bit line configured to be driven by a bit line driver, a source line configured to be driven by a source line driver adjacent to the bit line driver, and a plurality of memory cells connected between the bit line and the source line. An electrical path of the bit line from each of the plurality of memory cells to the bit line driver increases as an electrical path of the source line from each of the plurality of memory cells to the source line driver decreases.