公开(公告)号：US20240421162A1

公开(公告)日：2024-12-19

申请号：US18529716

申请日：2023-12-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minchul AHN ,  Yeonggil KIM ,  Sungbin PARK ,  Deokyoung JUNG

IPC: H01L27/12

Abstract: An integrated circuit device includes a backside insulating structure including an etch stop pattern, gate lines arranged over the backside insulating structure and each overlapping the etch stop pattern in a vertical direction, source/drain regions respectively arranged one-by-one between the gate lines, and a backside via contact passing through the etch stop pattern in the vertical direction and connected to a first source/drain region selected from the source/drain regions, wherein the backside via contact includes a stepped portion, which is apart from a first vertical level in the vertical direction by as much as a first distance and has a change in the width of the backside via contact in a horizontal direction at a second vertical level that is adjacent to the etch stop pattern, the first vertical level being closest to the plurality of gate lines in the backside insulating structure.