公开(公告)号：US20230129825A1

公开(公告)日：2023-04-27

申请号：US17828327

申请日：2022-05-31

申请人： Samsung Electronics Co., Ltd.

发明人： Yeonggil KIM ,  Seonbae KIM ,  Woojin LEE ,  Jayeong HEO

IPC分类号： H01L27/118

摘要： An integrated circuit (IC) device including a fin-type active region on a substrate and a gate line on the fin-type active and having a first uppermost surface at a first vertical level, an insulating spacer covering a sidewall of the gate line and having a second uppermost surface at the first vertical level, and an insulating guide film covering the second uppermost surface of the insulating spacer may be provided. The gate line may include a multilayered conductive film structure that includes a plurality of conductive patterns and have a top surface defined by the conductive patterns, which includes at least first and second conductive patterns including different materials from each other and a unified conductive pattern that is in contact with a top surface of each of the conductive patterns and has a top surface that defines the first uppermost surface.