公开(公告)号：US20240421162A1

公开(公告)日：2024-12-19

申请号：US18529716

申请日：2023-12-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minchul AHN ,  Yeonggil KIM ,  Sungbin PARK ,  Deokyoung JUNG

IPC: H01L27/12

Abstract: An integrated circuit device includes a backside insulating structure including an etch stop pattern, gate lines arranged over the backside insulating structure and each overlapping the etch stop pattern in a vertical direction, source/drain regions respectively arranged one-by-one between the gate lines, and a backside via contact passing through the etch stop pattern in the vertical direction and connected to a first source/drain region selected from the source/drain regions, wherein the backside via contact includes a stepped portion, which is apart from a first vertical level in the vertical direction by as much as a first distance and has a change in the width of the backside via contact in a horizontal direction at a second vertical level that is adjacent to the etch stop pattern, the first vertical level being closest to the plurality of gate lines in the backside insulating structure.

公开(公告)号：US20240258204A1

公开(公告)日：2024-08-01

申请号：US18486853

申请日：2023-10-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yeonggil KIM ,  Hoonseok SEO ,  Minchul AHN ,  Wookyung YOU ,  Woojin LEE ,  Junghwan CHUN

IPC: H01L23/48 ,  H01L29/06 ,  H01L29/417 ,  H01L29/423 ,  H01L29/775 ,  H01L29/786

CPC classification number: H01L23/481 ,  H01L29/0673 ,  H01L29/41733 ,  H01L29/42392 ,  H01L29/775 ,  H01L29/78696

Abstract: A semiconductor device comprising: a substrate including an active region extending in a first direction; a gate structure extending in a second direction on the active region; source/drain regions on the active region and adjacent the gate structure; a backside insulating layer on a lower surface of the substrate; a vertical power structure between adjacent source/drain regions, wherein the vertical power structure extends through the substrate and the backside insulating layer and has an exposed lower surface exposed; an interlayer insulating layer on the backside insulating layer; a backside power structure that extends through the interlayer insulating layer and is connected to the vertical power structure; and a first alignment insulating layer between the backside insulating layer and the interlayer insulating layer, wherein the first alignment insulating layer has a first opening exposing the lower surface of the vertical power structure and contacts the backside power structure.