公开(公告)号：US20250142882A1

公开(公告)日：2025-05-01

申请号：US18632579

申请日：2024-04-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seowoo NAM ,  Heonjong SHIN ,  Sunwoo KIM ,  Sunggyu HAN

IPC: H01L29/417 ,  H01L21/768 ,  H01L23/48 ,  H01L29/423 ,  H01L29/66 ,  H01L29/775 ,  H01L29/786

Abstract: A semiconductor device may include a base insulation layer, a channel layer on a first surface of the base insulation layer, a first source/drain pattern and a second source/drain pattern spaced apart from each other in a first direction on a first surface of the base insulating layer with the channel layer therebetween, a gate structure on the first surface of the base insulation layer and extending in a second direction crossing the first direction, a lower wire structure on a second surface of the base insulation layer, and a through electrode spaced apart from the gate structure with the first source/drain pattern between the through electrode and the gate structure. The through electrode may penetrate the base insulation layer and electrically connect the first source/drain pattern to the lower wire structure. The first direction may be parallel to the first surface of the base insulation layer.