公开(公告)号：US20220260906A1

公开(公告)日：2022-08-18

申请号：US17736132

申请日：2022-05-04

Applicant: Samsung Electronics Co., Ltd. ,  Inpria Corporation

Inventor： CHAWON KOH ,  TSUNEHIRO NISHI ,  BRIAN CARDINEAU ,  SANGYOON WOO ,  JASON STOWERS ,  SOO YOUNG CHOI

IPC: G03F7/004 ,  G03F7/11 ,  H01L21/027 ,  H01L21/311 ,  G03F7/20

Abstract: Provided herein are photoresist compositions and methods for fabricating semiconductor devices using the same. A photoresist composition may include an organometallic material, a fluorine-containing material, and an organic solvent.

公开(公告)号：US20200348594A1

公开(公告)日：2020-11-05

申请号：US16399473

申请日：2019-04-30

Applicant: Samsung Electronics Co., Ltd. ,  Inpria Corporation

Inventor： CHAWON KOH ,  TSUNEHIRO NISHI ,  Brian Cardineau ,  Sangyoon Woo ,  Jason Stowers ,  SOO YOUNG CHOI

IPC: G03F7/11 ,  G03F7/004 ,  G03F7/20 ,  H01L21/027 ,  H01L21/311

Abstract: Provided herein are photoresist compositions and methods for fabricating semiconductor devices using the same. A photoresist composition may include an organometallic material, a fluorine-containing material, and an organic solvent.

公开(公告)号：US20210181628A1

公开(公告)日：2021-06-17

申请号：US16947515

申请日：2020-08-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： THANH CUONG NGUYEN ,  DAEKEON KIM ,  TSUNEHIRO NISHI ,  NAOTO UMEZAWA ,  HYUNWOO KIM

IPC: G03F7/004 ,  C07C25/13 ,  G03F7/038 ,  G03F7/039 ,  H01L21/027

Abstract: Disclosed are resist compositions and semiconductor device fabrication methods using the same. The resist composition comprises a hypervalent iodine compound of Chemical Formula 1 below. Wherein R1 to R7 are as defined herein.