公开(公告)号：US20220415450A1

公开(公告)日：2022-12-29

申请号：US17850722

申请日：2022-06-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： THANH CUONG NGUYEN ,  DAEKEON KIM ,  JIYOUNG PARK ,  HYUNWOO KIM ,  SEUNGMIN LEE ,  INKOOK JANG ,  SUKKOO HONG

IPC: G16C20/30 ,  G16C20/70

Abstract: A method of estimating solubility includes obtaining input data representing a chemical structure of a target material; generating at least one descriptor based on the input data; obtaining at least one solubility parameter by providing the at least one descriptor to a machine learning model trained based on chemical structures and sample solubility parameters of sample materials; and calculating the solubility based on the at least one solubility parameter, wherein the at least one descriptor includes at least one of a zero-dimensional descriptor, a one-dimensional descriptor, a two-dimensional descriptor, or a three-dimensional descriptor, each representing the chemical structure of the target material.

公开(公告)号：US20240243010A1

公开(公告)日：2024-07-18

申请号：US18403204

申请日：2024-01-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JIHYUN LEE ,  EUN HYEA KO ,  SOYOUNG LEE ,  THANH CUONG NGUYEN ,  HOON HAN ,  BYUNGKEUN HWANG ,  HIROYUKI UCHIUZOU ,  KIYOSHI MURATA ,  TOMOHARU YOSHINO ,  YOUNJOUNG CHO

IPC: H01L21/768 ,  H01L21/02 ,  H01L21/311 ,  H01L21/3213

CPC classification number: H01L21/76831 ,  H01L21/02183 ,  H01L21/02186 ,  H01L21/0228 ,  H01L21/02301 ,  H01L21/31122 ,  H01L21/32136 ,  H01L21/76844

Abstract: An inhibitor for selectively depositing a thin film may include a compound represented by Formula 1 below:




where, R1 is an aldehyde group, an amino group, a carbonyl group, a ketone group, a nitrile group, an acyl halide group, a substituted or unsubstituted C2 to C20 alkenyl group, or a substituted or unsubstituted C2 to C20 alkynyl group, R2 is a halogen atom, a substituted or unsubstituted C1 to C10 alkylhalide group, a substituted or unsubstituted C4 to C10 tertiary alkyl group, or a substituted or unsubstituted C1 to C10 alkylthio group, and n is an integer from 1 to 5. The inhibitor is adsorbed to a surface of a first layer but not adsorbed to a surface of a second layer. The first layer may include a metal-based material, and the second layer is different from the first layer and may include an insulating material.

公开(公告)号：US20210181628A1

公开(公告)日：2021-06-17

申请号：US16947515

申请日：2020-08-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： THANH CUONG NGUYEN ,  DAEKEON KIM ,  TSUNEHIRO NISHI ,  NAOTO UMEZAWA ,  HYUNWOO KIM

IPC: G03F7/004 ,  C07C25/13 ,  G03F7/038 ,  G03F7/039 ,  H01L21/027

Abstract: Disclosed are resist compositions and semiconductor device fabrication methods using the same. The resist composition comprises a hypervalent iodine compound of Chemical Formula 1 below. Wherein R1 to R7 are as defined herein.