公开(公告)号：US20170207158A1

公开(公告)日：2017-07-20

申请号：US15408977

申请日：2017-01-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Pil-kyu KANG ,  Ho-jin LEE ,  Byung-lyul PARK ,  Tae-yeong KIM ,  Seok-ho KIM

IPC: H01L23/498 ,  H01L23/00 ,  H01L21/768 ,  H01L25/065

CPC classification number: H01L23/481 ,  H01L21/76879 ,  H01L21/76898 ,  H01L23/49811 ,  H01L23/49822 ,  H01L23/49838 ,  H01L24/09 ,  H01L24/17 ,  H01L25/0657 ,  H01L2224/08146 ,  H01L2224/16146 ,  H01L2225/06548

Abstract: A multi-stacked device includes a lower device having a lower substrate, a first insulating layer on the lower substrate, and a through-silicon-via (TSV) pad on the first insulating layer, an intermediate device having an intermediate substrate, a second insulating layer on the intermediate substrate, and a first TSV bump on the second insulating layer, an upper device having an upper substrate, a third insulating layer on the upper substrate, a second TSV bump on the third insulating layer, and a TSV structure passing through the upper substrate, the third insulating layer, the second insulating layer, and the intermediate substrate to be connected to the first TSV bump, the second TSV bump, and the TSV pad. An insulating first TSV spacer between the intermediate substrate and the TSV structure and an insulating second TSV spacer between the upper substrate and the TSV structure are spaced apart along a stacking direction.

公开(公告)号：US20140106649A1

公开(公告)日：2014-04-17

申请号：US14056270

申请日：2013-10-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Tae-yeong KIM ,  Pil-kyu KANG ,  Byung-Iyul PARK ,  Jin-ho PARK

IPC: H01L21/02

CPC classification number: H01L21/02016 ,  H01L21/304 ,  H01L21/6835 ,  H01L21/6836 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68363 ,  H01L2221/68381

Abstract: Wafer processing methods are provided. The methods may include cutting respective edges of a wafer and an adhesive a predetermined angle before grinding a back surface of the wafer.

Abstract translation: 提供晶片加工方法。 所述方法可以包括在研磨晶片的背面之前切割晶片和粘合剂的相应边缘预定的角度。

公开(公告)号：US20230215744A1

公开(公告)日：2023-07-06

申请号：US18119909

申请日：2023-03-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jun-hyung KIM ,  Sung-hyup KIM ,  Tae-yeong KIM

IPC: H01L21/66 ,  H01L23/00 ,  H01L27/146

CPC classification number: H01L22/12 ,  H01L24/80 ,  H01L27/1469 ,  H01L2224/80895 ,  H01L2224/80896

Abstract: A substrate bonding apparatus includes a substrate susceptor to support a first substrate, a substrate holder over the substrate susceptor to hold a second substrate, the substrate holder including a plurality of independently moveable holding fingers, and a chamber housing to accommodate the substrate susceptor and the substrate holder.

公开(公告)号：US20200075360A1

公开(公告)日：2020-03-05

申请号：US16507407

申请日：2019-07-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jun-hyung KIM ,  Sung-hyup KIM ,  Tae-yeong KIM

IPC: H01L21/67 ,  H01L23/00 ,  H01L25/00 ,  H01L21/687 ,  H01L21/673

Abstract: A substrate bonding apparatus includes a substrate susceptor to support a first substrate, a substrate holder over the substrate susceptor to hold a second substrate, the substrate holder including a plurality of independently moveable holding fingers, and a chamber housing to accommodate the substrate susceptor and the substrate holder.

公开(公告)号：US20200013643A1

公开(公告)日：2020-01-09

申请号：US16276904

申请日：2019-02-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jun-hyung KIM ,  Sung-hyup KIM ,  Tae-yeong KIM

IPC: H01L21/67 ,  H01L21/20 ,  H01L21/18 ,  H01L21/687

Abstract: A wafer bonding apparatus includes a first bonding chuck to fix a first wafer on a first surface thereof, a second bonding chuck to fix a second wafer on a second surface thereof facing the first surface, a bonding initiation member at a center of the first bonding chuck to push the first wafer towards the second surface, and a membrane member including a protrusion protruding from a center portion of the second surface towards the first surface, and a planar portion defining the protrusion on an outer region surrounding the center portion.