公开(公告)号：US10672479B2

公开(公告)日：2020-06-02

申请号：US16127793

申请日：2018-09-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Taek-Soo Kim ,  Chan-Ik Park ,  Hyun-Sung Shin ,  Sang-Hoan Chang

IPC: G11C7/10 ,  G11C16/14 ,  G11C16/26 ,  G11C16/08 ,  G11C19/28 ,  G11C29/42 ,  G11C8/14 ,  G11C7/18 ,  H01L27/11526 ,  G11C5/14 ,  G11C14/00 ,  H01L27/1157 ,  H01L27/11582 ,  G11C29/04 ,  G11C16/04

Abstract: A nonvolatile memory device includes a memory cell array including a plurality of nonvolatile memory cells; a page buffer circuit connected to the memory cell array through a plurality of bit lines; a calculation circuit configured to perform a calculation on information bits and weight bits based on a calculation window having a first size, the information bits and weight bits being included in a user data set, the memory cell array being configured to store the user data set, the calculation circuit being further configured to receive the user data set through the page buffer circuit; and a data input/output (I/O) circuit connected to the calculation circuit, wherein the calculation circuit is further configured to provide an output data set to the data I/O circuit in response to the calculation circuit completing the calculation with respect to all of the information bits and the weight bits, and wherein the output data set corresponds to a result of the completed calculation.