公开(公告)号：US12255248B2

公开(公告)日：2025-03-18

申请号：US18540280

申请日：2023-12-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Wonhyuk Hong ,  Jongjin Lee ,  Taesun Kim ,  Myunghoon Jung ,  Kang-ill Seo

IPC: H01L23/528 ,  H01L21/8234 ,  H01L27/088 ,  H01L29/06 ,  H01L29/08 ,  H01L29/423 ,  H01L29/66 ,  H01L29/775 ,  H01L29/786

Abstract: A system and a method are disclosed for forming a bottle-neck shaped backside contact structure in a semiconductor device, wherein the bottle-neck shaped backside contact structure has a first side partially within the first source/drain structure, a second side contacting a backside power rail, and a liner extending from the first side to the backside power rail. The liner includes a first region comprised of either a Ta silicide liner or a Ti silicide liner, a second region comprised of a Ti/TiN liner and a third region comprised of either a Ta silicide liner or a Ti silicide liner. The backside contact structure includes a first portion having a positive slope and a second portion, adjacent to the first portion, having no slope.

公开(公告)号：US20230361032A1

公开(公告)日：2023-11-09

申请号：US17969440

申请日：2022-10-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Wonhyuk HONG ,  Jaemyung Choi ,  Jaejik Baek ,  Janggeun Lee ,  Myunghoon Jung ,  Taesun Kim ,  Kang-ill Seo

IPC: H01L23/528 ,  H01L21/768

CPC classification number: H01L23/5283 ,  H01L21/76885 ,  H01L21/76865 ,  H01L23/5226

Abstract: A semiconductor device includes a dielectric layer, a plurality of vias formed in the dielectric layer, an adhesion layer deposited on a top surface of the dielectric layer, and a plurality of metal lines. A first metal line of the plurality of metal lines includes a first recess formed at a bottom surface of the first metal line such that a first section of the first metal line directly contacts the first via and a second section of the first metal line defined by the first recess does not directly contact the first via or the dielectric layer in which the first via is formed.

公开(公告)号：US20240080044A1

公开(公告)日：2024-03-07

申请号：US18461120

申请日：2023-09-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Taesun Kim ,  Jinhong Park ,  Hwisoo So ,  Kyoungwoo Lee ,  Jinhyo Jung

IPC: H03M13/11

CPC classification number: H03M13/1111

Abstract: The method of detecting a soft error includes copying, in a program loaded into a memory, an original branch command to a copied branch command, executing, by a processor, a first command set comprising the copied branch command, executing, by a processor, a second command set comprising the original branch command, and determining, by a soft error detection circuit, whether an error exists in the execution of the original branch command based on the execution result of the first command set and the second command set.

公开(公告)号：US20250169108A1

公开(公告)日：2025-05-22

申请号：US18938703

申请日：2024-11-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Taesun Kim ,  Sangjine Park ,  Youngjun Kim

IPC: H01L29/417 ,  H01L29/06 ,  H01L29/423 ,  H01L29/66 ,  H01L29/775 ,  H01L29/786

Abstract: An integrated circuit device includes a fin-type active region extending in a first horizontal direction on a substrate, a gate line disposed on the fin-type active region on the substrate and extending in a second horizontal direction intersecting the first horizontal direction, a source/drain region disposed on the fin-type active region and disposed adjacent to the gate line in the first horizontal direction, a source/drain contact disposed on the source/drain region, an upper insulating structure disposed on the gate line and including an etch stop film and an interlayer insulating film, a source/drain via contact passing through the upper insulating structure and connected to the source/drain contact, and an air gap disposed between the etch stop film and the source/drain via contact and overlapping a part of the source/drain via contact in a horizontal direction.