SENSOR DEVICE AND SEMICONDUCTOR PROCESSING APPARATUS USING THE SAME

    公开(公告)号:US20240412960A1

    公开(公告)日:2024-12-12

    申请号:US18404645

    申请日:2024-01-04

    Abstract: A sensor device includes a first substrate, a second substrate on the first substrate, a plurality of detection units between the first substrate and the second substrate and configured to collect detection information from plasma formed in a space above the second substrate, a controller configured to generate characteristic data representing characteristics of the plasma based on the detection information collected by the plurality of detection units, and a power supply unit including a radio frequency (RF) energy harvester configured to produce power for operation of at least one of the plurality of detection units and the controller from RF power used to form the plasma.

    SENSOR APPARATUS, PLASMA PROCESSING APPARATUS INCLUDING THE SAME, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE USING THE SAME

    公开(公告)号:US20250069871A1

    公开(公告)日:2025-02-27

    申请号:US18597432

    申请日:2024-03-06

    Abstract: A sensor apparatus for analyzing plasma in a plasma processing chamber, includes: a first substrate; a second substrate on the first substrate; and a plurality of sensors between the first substrate and the second substrate, the plurality of sensors being spaced apart from each other, wherein each of the plurality of sensors includes: (a) a sensing assembly that includes: (i) a wavelength selector on which light emitted from the plasma is incident and that is configured to separate wavelengths of a spectrum of the light, and (ii) a spectrometer that is optically connected to the wavelength selector and that is configured to detect the spectrum for each separated wavelength; and (b) a battery connected to the sensing assembly and configured to supply first power to the sensing assembly.

    PLASMA ANALYZER, PLASMA PROCESSING APPARATUS, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE USING THE SAME

    公开(公告)号:US20250069869A1

    公开(公告)日:2025-02-27

    申请号:US18636962

    申请日:2024-04-16

    Abstract: A plasma processing apparatus includes a chamber in which plasma is generated, a support portion configured to support an object to be processed within the chamber, a head portion within the chamber and opposite to the support portion in a first direction, and a plasma analyzer including: a plurality of light collectors in the head portion, the plurality of light collectors configured to receive light emitted from plasma at a plurality of positions, a spectrometer outside the chamber nd connected to the plurality of light collectors, and a multiplexer connected between the plurality of light collectors and the spectrometer, the multiplexer configured to select one of a plurality of lights transmitted from the plurality of light collectors and transmit the selected one of the plurality of lights to the spectrometer.

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